Fabrication and characterization of field-effect transistor device with C2v isomer of Pr@C82

Nagano, Takayuki; Kuwahara, Eiji; Takayanagi, Toshio; Kubozono, Yoshihiro; Fujiwara, Akihiko

doi:10.1016/j.cplett.2005.05.019

Cited by 28 publications

(26 citation statements)

References 20 publications

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“…3͑b͒. 14 These results show that the FET properties of the higher fullerene FETs are similar to each other. ͑1͒.…”

supporting

confidence: 59%

“…16 This value is the highest one next to that of the C 60 FET among fullerene FETs. [12][13][14] These FET parameters show that C 88 is the second best material for active layer of FET among fullerenes. 1͑d͔͒.…”

mentioning

confidence: 83%

“…[11][12][13][14] All FET devices with higher fullerenes and endohedral metallofullerenes showed n-channel normally on properties which originated from high bulk currents caused by small gap energies, E g s. Thus, the observed properties reflect the intrinsic nature of fullerenes used as active layer. [11][12][13][14] All FET devices with higher fullerenes and endohedral metallofullerenes showed n-channel normally on properties which originated from high bulk currents caused by small gap energies, E g s. Thus, the observed properties reflect the intrinsic nature of fullerenes used as active layer.…”

mentioning

confidence: 98%

“…The and V T were estimated to be 7.2ϫ 10 −4 cm 2 V −1 s −1 and −50 V, respectively, with Eq. [11][12][13][14] The high for the higher fullerenes originates from the fact that intermolecular overlap of the lowest unoccupied molecular orbitals ͑LUMOs͒ of the higher fullerenes is large because of the delocalized character. The on-off ratio was 24, whose value was larger by three times than that at 300 K. The I D at V G = 0 V was lower by one order of magnitude than that at 300 K. Thus, a decrease in bulk current can lead to an increase in the on-off ratio at 230 K. The increased exponentially with an increase in temperature, T, up to 350 K ͓Fig.…”

mentioning

confidence: 99%

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Fabrication of field-effect transistor device with higher fullerene, C88

Nagano

Sugiyama

Kuwahara

et al. 2005

Applied Physics Letters

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Interdependence of contact properties and field-and density-dependent mobility in organic field-effect transistors J. Appl. Phys. 105, 014509 (2009); 10.1063/1.3058640 Ambipolar organic field-effect transistors fabricated using a composite of semiconducting polymer and soluble fullerene Appl. Phys. Lett. 89, 153505 (2006); 10.1063/1.2361269 Fabrication and characterization of single-grain organic field-effect transistor of pentacene

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“…3͑b͒. 14 These results show that the FET properties of the higher fullerene FETs are similar to each other. ͑1͒.…”

supporting

confidence: 59%

mentioning

confidence: 83%

mentioning

confidence: 98%

mentioning

confidence: 99%

See 2 more Smart Citations

Fabrication of field-effect transistor device with higher fullerene, C88

Nagano

Sugiyama

Kuwahara

et al. 2005

Applied Physics Letters

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“…4 Field-effect transistors (FETs) with thin films of fullerenes have been extensively studied during the last decades, [1][2][3][4][5][6][7][8][9][10][11][12] and the potential applications of fullerene FETs in next-generation electronic devices have been discussed based on their high field-effect mobilities, μs. The first fullerene FET device was fabricated with thin films of C 60 and SiO 2 gate insulator by Haddon et al 1 This device showed n-channel properties and high μ value of 0.08 -0.30 cm 2 V -1 s -1 .…”

mentioning

confidence: 99%

Fabrication of C60 field-effect transistors with polyimide and Ba0.4Sr0.6Ti0.96O3 gate insulators

Kubozono

Nagano

Haruyama

et al. 2005

Applied Physics Letters

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A flexible C60 field-effect transistor (FET) device has been fabricated with a polyimide gate insulator on the poly(ethylene terephthalate) substrate, and n-channel normally off FET properties are observed in this FET device. The field-effect mobility, μ, is estimated to be ∼10−2cm2V−1s−1 at 300K. Furthermore, the C60 FET has been fabricated with a high-dielectric Ba0.4Sr0.6Ti0.96O3 (BST) gate insulator, showing n-channel properties; the μ value is estimated to be ∼10−4cm2V−1s−1 at 300K. The FET device operates at very low gate voltage, VG, and low drain-source voltage, VDS. Thus these C60 FET devices possess flexibility and low-voltage operation characteristic of polyimide and BST gate insulators, respectively.

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Large‐Area Endohedral Metallofullerene Single‐Crystal Arrays for High‐Performance Field‐Effect Transistors and Photodetectors

Yang

et al. 2021

Adv Elect Materials

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A structure with high crystallinity and orderly molecular packing is a requirement for high‐performance optoelectronic devices. However, growing large‐area, long‐range order, highly crystalline micro or nanostructures remains a challenge. Endohedral metallofullerenes (EMFs) are spherical π‐conjugated molecules with unique electronic structures, hence they can be easily assembled into highly ordered crystals through intermolecular π–π interactions. In this work, large‐area single‐crystal microwire arrays of M3N@Ih‐C80 (M = Sc, Lu) are prepared with the assistance of a pillar‐structured template, and the microwire diameter can be tuned via the fullerene concentration. A field‐effect transistor is fabricated using Sc3N@Ih‐C80 microwire arrays, exhibiting a record‐high charge carrier mobility (6.16 cm2 V−1 s−1) among EMF‐based devices. Further, microwire‐based photodetectors are developed, with a response time as low as 0.1 s. The precise arrangement of the M3N@Ih‐C80 molecules helps improve the electron transportation channels, thereby enhancing the device performance.

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Fabrication and characterization of field-effect transistor device with C2v isomer of Pr@C82

Cited by 28 publications

References 20 publications

Fabrication of field-effect transistor device with higher fullerene, C88

Fabrication of field-effect transistor device with higher fullerene, C88

Fabrication of C60 field-effect transistors with polyimide and Ba0.4Sr0.6Ti0.96O3 gate insulators

Large‐Area Endohedral Metallofullerene Single‐Crystal Arrays for High‐Performance Field‐Effect Transistors and Photodetectors

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