Ambipolar field-effect transistor (FET) device was fabricated with heterostructure of thin films of C 60 and pentacene. Three types of device structures in the C 60 /pentacene heterostructure FET device were studied in order to realize the best ambipolar properties. In the middle-contact type FET device of C 60 and pentacene, the mobility in p-channel operation was estimated to be 6.8 ϫ 10 −2 cm 2 V −1 s −1 , while the in n-channel operation was 1.3ϫ 10 −3 cm 2 V −1 s −1. This ambipolar FET device is available for a practical building-block to form CMOS integrated circuits with low-power consumption, good-noise margins, and ease of design.
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