Fabrication and characterization of GaN/InGaN MQW solar cells

Mahala, Pramila; Singh, Sumitra; Pal, Saurabh; Singh, Kuldip; Chauhan, Ashok; Kumar, Pawan; Parjapat, Priyavart; Kushwaha, Bhoopendra Kumar; Ray, Abhijit; Jani, Omkar; Dhanavantri, C.

doi:10.1007/s00339-016-0146-0

Cited by 6 publications

(1 citation statement)

References 28 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…However, extending the emission range (From green to red) and improve the luminescence property of InGaN is still challenge [15]. Furthermore, to minimize the lattice mismatch between InN and GaN to obtain InGaN layer with high crystalline quality is another challenge [6,16,17]. In order to surmount this intricacy, the InN layers are generally grown at low temperature (LT) due to the thermal decomposition of InN.…”

Section: Introductionmentioning

confidence: 99%

Structural, morphological, optical and electrical characterization of InGaN/GaN MQW structures for optoelectronic applications

Prabakaran

Jayasakthi

Pradeep

et al. 2019

Applied Surface Science

View full text Add to dashboard Cite

InGaN/GaN multiple quantum well (MQW) structures were grown on c-plane sapphire substrate using metal organic chemical vapour deposition technique by varying the MQW periods. The indium composition and thickness were estimated using high-resolution X-ray diffraction. InGaN well, GaN barriers and Indium composition were estimated as 3 nm, 18 nm and 16-18% using epitaxy smooth fit software. Reciprocal space mapping revealed that InGaN/GaN MQW samples were coherently strained. High-resolution transmission electron microscopy images confirmed good interface between the InGaN/GaN MQW structures. Atomic force microscopy and scanning electron microscopy exhibit decrease in the surface roughness with increase in the number of InGaN/GaN MQW periods with respect to the number of defects comprising of threading dislocations and hexagonal V-pits. Self-organized In(Ga)N like nanostructures with spiral growth mechanism was also observed due to the low temperature growth of p-GaN layer. The photoluminescence spectra of the MQWs showed a red-shift when the number of QW periods was increased due to quantum confined stark effect. Hall Effect measurement displayed good semiconducting behavior in the InGaN/GaN MQW structures. The carrier concentration values also emphasized adequate variations when number of periods was increased.

show abstract

Section: Introductionmentioning

confidence: 99%