Metal-Insulator-Semiconductor (MIS) and Semiconductor-Insulator-Semiconductor (SIS) structured solar cells have been considered a viable alternative to thermally diffused p-n junctions for use on polycrystalline thin-film silicon substrates. Early work indicated that thermal diffusion of a j~mction in polycrystalline silicon substrates could impose severe problems. Experimental investigations have shown that a p-n junction in polycrystalline silicon can have well behaved characteristics. The major efficiency loss mechanism, introduced by the presence of grain boundries, apparently does not come from the lower value of shunt resistance but from the additional recombination loss along the grain boundaries. This paper's purpose is to review the status of MIS and SIS solar cell technologies and assess the potential of these structures to meet low cost goals. Three major types of MIS/SIS solar cells are discussed in terms of structure, materials used in the fabrication, and the current collection under illumination~ The types of solar cells discussed include the thin metal MIS structure, the conducting oxide SIS structure, and the MIS inversion layer device. The specific advantages of a MIS/SIS solar cell are investigated by the use of theoretical calculations. The spectral response, short circuit current, open circuit voltage, fill factor, and cell efficiency have been calculated for the MIS/SIS case, the advanced diffused, and standard diffused solar cells. Several specific problem areas exist with these devices. The possible loss mechanisms in the MIS/SIS device are detailed, the cell stability and degradation mechanisms are identified, and the fabrication techniques amenable to large scale use are discussed. A major conclusion of the paper is that the MIS/SIS solar cells have no apparent advantage over diffused p-n junctions.