Fabrication and Characterization of Metal-Semiconductor Schottky Barrier Junctions

Sharma, B. L.

doi:10.1007/978-1-4684-4655-5_3

Cited by 84 publications

(139 citation statements)

References 311 publications

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“…10. The straight line nature of this plot confirms the effect of image force on Schottky barrier height which is also supported by studies published in the literature [40]. Further measurements have been performed at room temperature to examine the effect of the scan rate on the Schottky barrier height b , ideality factor n and series resistance R s .…”

Section: Resultssupporting

confidence: 86%

Hysteresis-free DC conduction in zinc oxide films with a conducting polymer counter electrode

Paul

Harris

Sharma

et al. 2017

J Mater Sci: Mater Electron

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A conducting polymer, namely poly (3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) has been employed as an alternative metal counter electrode to study steady state charge conduction through a spin-coated 5.2 µm thick ZnO film in a sandwich structure on a fluorine doped tin oxide coated glass substrate. The room temperature current-voltage characteristics exhibit rectifying behaviour without hysteresis as the bias voltage is cycled between ± 10V for varying voltage sweep rate from 100 to 1000 mV/s. Thermionic emission is believed to be the dominant conduction mechanism at forward bias voltage V ≤ 2.5 V whereas the space charge limited current conduction becomes effective in a higher voltage region V > 2.5 V. The barrier height (φ b ), ideality factor (n) and series resistance (R s ) are found to be strongly temperature dependent parameters showing the increase of b and simultaneous decreases of n and R s within the range of 218-298 K. The behaviour of the temperature dependent charge carrier mobility in the higher voltage region has also been discussed. The use of PEDOT:PSS is quite promising as an alternative to metal electrodes in semiconductor devices.

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Section: Resultssupporting

confidence: 86%

Hysteresis-free DC conduction in zinc oxide films with a conducting polymer counter electrode

Paul

Harris

Sharma

et al. 2017

J Mater Sci: Mater Electron

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“…In practice, the value of the Schottky barrier may be further complicated by various physical and chemical phenomena, such as metal and semiconductor interdiffusion, chemical reactions, lateral junction non-uniformities, etc. Thus, metal±semiconductor junctions still attract a considerable amount of theoretical and experimental research, the results of which are described in detail elsewhere (see, e.g., [7,44]). In practice, 0 b is determined experimentally.…”

Section: Interface Space Charge Regionsmentioning

confidence: 99%

Surface photovoltage phenomena: theory, experiment, and applications

Kronik

Shapira

1999

Surface Science Reports

1,529

804

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“…When the device is illuminated at 370 nm, the photo current increased to 6.27 Â 10 À 4 A at 1 V bias. The photo-to-dark current contrast ratio was found to be about 2.22 Â 10 5 at bias voltage of 3 V, which is attributed by the excitation of surface plasmons at the interface between ZnO:Ga and graphene layer [24].…”

Section: Resultsmentioning

confidence: 91%

Metal–semiconductor–metal UV photodetector based on Ga doped ZnO/graphene interface

Kumar

Noh

Polat

et al. 2015

Solid State Communications

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a b s t r a c tFabrication and characterization of metal-semiconductor-metal (MSM) ultraviolet (UV) photodetector (PD) based on Ga doped ZnO (ZnO:Ga)/graphene is presented in this work. A low dark current of 8.68 nA was demonstrated at a bias of 1 V and a large photo to dark contrast ratio of more than four orders of magnitude was observed. MSM PD exhibited a room temperature responsivity of 48.37 A/W at wavelength of 350 nm and UV-to-visible rejection ratio of about three orders of magnitude. A large photo-todark contrast and UV-to-visible rejection ratio suggests the enhancement in the PD performance which is attributed to the existence of a surface plasmon effect at the interface of the ZnO:Ga and underlying graphene layer.

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Fabrication and Characterization of Metal-Semiconductor Schottky Barrier Junctions

Cited by 84 publications

References 311 publications

Hysteresis-free DC conduction in zinc oxide films with a conducting polymer counter electrode

Hysteresis-free DC conduction in zinc oxide films with a conducting polymer counter electrode

Surface photovoltage phenomena: theory, experiment, and applications

Metal–semiconductor–metal UV photodetector based on Ga doped ZnO/graphene interface

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