Fabrication and characterization of nickel silicide ohmic contacts to n-type 4H silicon carbide

Kuchuk, Andrian; Kladko, V. P.; Guziewicz, M.; Piotrowska, A.; Minikayev, R.; Stonert, A.; Ratajczak, R.

doi:10.1088/1742-6596/100/4/042003

Cited by 27 publications

(29 citation statements)

References 6 publications

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“…The substrates were first cleaned according to the procedure described in [9] and then placed in the magnetron sputtering system with base pressure below 10 −4 Pa.…”

Section: Methodsmentioning

confidence: 99%

“…These structures were annealed at 600 • C (N 2 , 15 min) to form stoichiometric phase of ␦-Ni 2 Si and next at 1000 • C (N 2 , 3 min) to obtain Ni 2 Si/n-SiC ohmic contacts [9]. Then the 150 nm-thick Au overlayers were deposited on Ni 2 Si/nSiC ohmic contacts by dc sputtering of Au target in Ar plasma.…”

Section: Methodsmentioning

confidence: 99%

“…Stoichiometric phase ␦-Ni 2 Si has been selected as optimal to form relatively low resistance ohmic contacts with smooth surface on n-SiC [9]. High-conductivity gold overlayer has been deposited after ohmic contact formation for interconnection or bonding metallization.…”

Section: Introductionmentioning

confidence: 99%

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Thermal degradation of Au/Ni2Si/n-SiC ohmic contacts under different conditions

Kuchuk

Guziewicz

Ratajczak

et al. 2009

Materials Science and Engineering: B

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“…The substrates were first cleaned according to the procedure described in [9] and then placed in the magnetron sputtering system with base pressure below 10 −4 Pa.…”

Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

See 1 more Smart Citation

Thermal degradation of Au/Ni2Si/n-SiC ohmic contacts under different conditions

Kuchuk

Guziewicz

Ratajczak

et al. 2009

Materials Science and Engineering: B

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“…[16][17][18][19][20] The silicide formation starts at 550 • C and its phase transformation continues at higher temperatures. The intensity of the Ni 2 Si peak is dramatically increased at above 700…”

Section: Resultsmentioning

confidence: 99%

“…[11][12][13][14][15] Nickel (Ni) silicide is shown to be a good choice for the n-type ohmic contacts. [16][17][18][19][20][21] For SiC, Ni 2 Si is rectifying until annealed at 950…”

mentioning

confidence: 99%

A Wafer-Scale Ni-Salicide Contact Technology on n-Type 4H-SiC

Elahipanah

Asadollahi

Ekström

et al. 2017

ECS J. Solid State Sci. Technol.

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A self-aligned Nickel (Ni) silicide process (Salicide) for n-type ohmic contacts on 4H-SiC is demonstrated and electrically verified in a wafer-scale device process. The key point is to anneal the contacts in two steps. The process is successfully employed on wafer-level and a contact resistivity below 5 × 10 −6 · cm 2 is achieved. The influence of the proposed process on the oxide quality is investigated and no significant effect is observed. The proposed self-aligned technology eliminates the undesirable effects of the lift-off process. Moreover, it is simple, fast, and manufacturable at wafer-scale which saves time and cost.

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Fundamentals and practice of metal contacts to wide band gap semiconductor devices

Borysiewicz

Kamińska

Myśliwiec

et al. 2011

Cryst. Res. Technol.

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Presented are the theoretical and experimental fundamentals of the fabrication of ohmic contacts to n‐ and p‐type wide band gap semiconductors such as SiC and GaN. In particular, the Ni‐Si/n‐SiC, Al‐Ti/p‐SiC, Ti‐Al/n‐GaN and Ni‐Au/p‐GaN systems are discussed with the focus on the thermally activated chemical reactions taking place at the metal‐semiconductor interface, that lead to the appearance of ohmic behaviour in the contact. Examples of reactions at very intimate interfaces are shown, which are irresolvable using even such sophisticated characterisation methods as high‐resolution transmission electron microscopy and can only be explained using modelling. The issue of thermal stability of the contacts is discussed and the introduction of specifically designed diffusion barriers (eg. Ta‐Si‐N) into the contact metallisation stack is presented as a solution improving drastically the thermal stability of the contacts without degrading their electrical properties. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Fabrication and characterization of nickel silicide ohmic contacts to n-type 4H silicon carbide

Cited by 27 publications

References 6 publications

Thermal degradation of Au/Ni2Si/n-SiC ohmic contacts under different conditions

Thermal degradation of Au/Ni2Si/n-SiC ohmic contacts under different conditions

A Wafer-Scale Ni-Salicide Contact Technology on n-Type 4H-SiC

Fundamentals and practice of metal contacts to wide band gap semiconductor devices

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