2010
DOI: 10.1016/j.synthmet.2010.05.011
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Fabrication and characterization of polyaniline/porous silicon heterojunction

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Cited by 29 publications
(19 citation statements)
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“…[35][36][37][38][39] In the present work, the R s of the fabricated NPOT/SiNWs has become lower than the published values. This finding may be explained as being due to the use of SiNWs, providing a 1-D nanowire array which offers a promising substrate with a direct pathway for charge transport and a high mobility for carriers.…”
Section: − V Characteristics Of the Synthesized Heterojunctioncontrasting
confidence: 63%
“…[35][36][37][38][39] In the present work, the R s of the fabricated NPOT/SiNWs has become lower than the published values. This finding may be explained as being due to the use of SiNWs, providing a 1-D nanowire array which offers a promising substrate with a direct pathway for charge transport and a high mobility for carriers.…”
Section: − V Characteristics Of the Synthesized Heterojunctioncontrasting
confidence: 63%
“…1(a) demonstrates several sharp peaks approximately at 9.80, 17.03, 18.45, 20.51, 23.06, 24.19, and 25.04 corresponding to crystal plane (001), (012), (003), (100), (020), (110), and (111), respectively. We do admit that the XRD pattern for the DBSA-doped-PAni is not similar to the reported one of PAni, [9][10][11][12] probably due to the difference of preparing method and the effect of DBSA in media. Furthermore, it is known from the literature 9-12 that the XRD of PAni clearly suggests that the system is generally amorphous.…”
mentioning
confidence: 65%
“…Scheme depicts the method used to immobilize aniline in the pores of the pSi. This functionalization process is often used to immobilize different proton‐containing substrates on silicon solid surfaces . At this stage, the excess amount of aniline remains adsorbed/absorbed on the pSi surface.…”
Section: Resultsmentioning
confidence: 99%
“…PANI is a well‐known hole‐conducting optoelectronic material that can absorb light energy to form excitons . The incorporation of PANI (p‐type, E g ≈ 1.90 eV) into the polar cavity of pSi:F (n‐type, E g ≈ 1.40 eV) allows the generation of an excellent interfacial junction for splitting the exciton into charge carriers .…”
Section: Resultsmentioning
confidence: 99%
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