We report fabrication of GaAs based metal-insulator-semiconductor solar cell with polyaniline, a polymeric material, as an insulator. The photovoltaic response of Aluminum/Polyaniline/GaAs metal-insulator-semiconductor diode was measured in the air mass (AM) 1.0 and 1.5. The values of the open circuit voltage, short circuit current and the series resistance at AM 1.0 are measured to be 0.45 mA, 1.07 V and 26 Ω, respectively. It is found that the thickness of the polyaniline layer plays a crucial role in determining various properties of the device. The findings are explained on the basis of the tunneling probability.

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In this work, we have deposited poly(aniline-co-m-aminobenzoic acid) on poly(vinyl alcohol) (PVA) by in situ polymerization. The polymerization was effected within maleic acid (MA) cross-linked PVA hydrogel. The copolymer was obtained by oxidative polymerization of aniline hydrochloride and m-aminobenzoic acid using ammonium persulfate as an oxidant. Instead of conventional solution polymerization, here synthesis was carried out on APS soaked MA cross-linked PVA (MA-PVA) film where the polymer was in situ deposited in its conducting form. The composite film was characterized by Fourier transform infra red (FT-IR) and ultraviolet visible (UV-VIS) spectroscopy and electrical measurements. Surface morphology of the composite films was studied by field emission scanning electron microscopy (FESEM). The variation of conductivity of the films was studied.