Fabrication and characterization of quaternary chalcopyrite Culn(S, Se)2 thin film by pulse plating electrodeposition

Edamura, T.; Muto, J.

doi:10.1007/bf00270742

Cited by 7 publications

(4 citation statements)

References 10 publications

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“…To understand the growth mechanism of the nanowires, it is necessary to consider the effects of the synthesis process and electrolyte. Previously, TU has been used as a sulfur source in electrodeposition of sulfides. , Sodium thiosulfate (Na 2 S 2 O 3 ) also has been used as a sulfur source in electrodeposition of sulfides. However, in our study, the use of sodium thiosulfate resulted in film formation only.…”

Section: Resultsmentioning

confidence: 99%

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Electrodeposition and Growth Mechanism of Copper Sulfide Nanowires

2011

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Thiourea (TU) is widely used as a corrosion inhibitor or as an additive in metal (e.g., copper) electroplating baths. TU facilitates the formation of uniform deposits with high brightness. In this study pertaining to the electrosynthesis of copper sulfide nanowires from dilute Cu 2þ containing solution, TU was used as a copper ion complexing agent and sulfur source. Nanowires with various diameters and lengths were obtained via single-step pulsed potential electrodeposition. The electrodeposition time can be used to control the diameter of the electrodeposited nanowires to within the range of 30À100 nm. X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) analyses showed that nanowires are formed from covellite (CuS) and djurleite (Cu 1.94 S). The crystal structures of these phases were observed by high-resolution transmission electron microscopy (HRTEM). Cyclic voltammetry and electrochemical impedance spectroscopy have been applied to analyze the growth process of the nanowires. The formation of complexes of copper ions and TU was found to be a key factor in the nanowire growth process. A diffusion-controlled growth mechanism is proposed to interpret the growth behavior of the nanowires and the change in the product morphology. According to the proposed mechanism, during the cathodic pulses, copper and copper sulfide deposits, and afterward, during the anodic pulses, the deposited copper electrochemically dissolves. Dissolution of copper during the anodic pulses is shown to inhibit the quasi-anomalous codeposition of copper sulfide and copper.

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Section: Resultsmentioning

confidence: 99%

“…Previously, TU has been used as a sulfur source in electrodeposition of sulfides. 79,80 Sodium thiosulfate (Na 2 S 2 O 3 ) also has been used as a sulfur source 81 in electrodeposition of sulfides. However, in our study, the use of sodium thiosulfate resulted in film formation only.…”

Section: Cyclic Voltammetry Studymentioning

confidence: 99%

Electrodeposition and Growth Mechanism of Copper Sulfide Nanowires

2011

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“…Various electrochemical deposition processes have been studied in an attempt to achieve good control over the stoichiometry: one-step deposition of CIS, [9][10][11][12][13][14]21,22,24,25,38,39 two-step deposition of the binaries Cu x Se and In 2 Se 3 followed by annealing to form CIS by a solid-state reaction, 14 three-step deposition of the elemental layers Cu, In, and Se followed again by annealing, 15,23 and deposition of either a Cu-In alloy or separate Cu and In layers which are subsequently selenized by reacting with H 2 Se gas or elemental selenium vapor. 4,16,17,19,32 In addition, the film stoichiometry and crystallinity have been corrected after film deposition by annealing under various (reactive or inert) atmospheres, 11,21,22,[31][32][33] etching with CN Ϫ ion containing solutions to remove binary Cu x Se phases, 26,28,29 or by adding the constituent elements by evaporation. 20,31 Naturally, the most desirable way for electrodepositing CIS for solar cells is a simple one-step deposition, and if annealing is still needed, that should be done under an inert atmosphere without any harmful reagents like H 2 Se or Se.…”

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confidence: 99%

One-Step Electrodeposition of Cu[sub 2−x]Se and CuInSe[sub 2] Thin Films by the Induced Co-deposition Mechanism

Kemell¹,

Ritala²,

Saloniemi³

et al. 2000

J. Electrochem. Soc.

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The induced co-deposition mechanism in one-step electrodeposition of Cu 2Ϫx Se and CuInSe 2 thin films was investigated. Cu 2Ϫx Se and CuInSe 2 thin films were deposited potentiostatically on Mo substrates by a one-step process from an acidic electrolyte containing SCN Ϫ ions as complexing agents. The films were examined by scanning electron microscopy, energy dispersive X-ray spectrometry, X-ray diffraction, and ion beam analysis methods. Good control of stoichiometry was achieved over a wide potential range, thus indicating that the film composition may indeed be controlled by the induced co-deposition mechanism. The effects of the thiocyanate ions on the reduction potentials of Cu ϩ , In 3ϩ , and Se 4ϩ ions were examined by cyclic voltammetry. In order to improve their crystallinity, the CuInSe 2 films were annealed under a N 2 atmosphere after deposition.

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“…The pulsed electrodeposition was widely used in metal electrodeposition to increase the deposition rate and modify the film quality. In previous researches, [6][7][8][9][10] the pulsed electrodeposition was also used in the CIS deposition to improve the film quality and the off-state in the pulsed potential provided time for the replenishment of cations to the diffusion layer. However, the open circuit potential of CIS is not 0 V. In previous researches, the off-state potential of pulsed electroplating, which was set at 0 V, could not represent non-current state.…”

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confidence: 99%

Pulsed Electrodeposition of CuInSe2 Thin Films onto Mo-Glass Substrates

Lee

Chang

et al. 2011

J. Electrochem. Soc.

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In this study, copper indium selenide (CIS) films were deposited by pulsed electrodeposition with multi potentials to control the atomic ratio of the CIS film and improve the deposition uniformity. It was found that smaller duty cycle and pulsed period enhanced the cathodic current due to ion replenishment. The results show that the Cu=In ratio was significantly influenced by reverse voltage of pulsed electrodeposition. The uniformity of the CIS films can be improved by proper reverse voltage. The deposition rate did not decrease in direct proportion to the duty cycle because the plating current was enhanced by the pulse effect. The pulsed deposited CIS film with optimized composition show smaller grain size, smoother microstructure, and less secondary phase than constant deposited film.

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Fabrication and characterization of quaternary chalcopyrite Culn(S, Se)2 thin film by pulse plating electrodeposition

Cited by 7 publications

References 10 publications

Electrodeposition and Growth Mechanism of Copper Sulfide Nanowires

Electrodeposition and Growth Mechanism of Copper Sulfide Nanowires

One-Step Electrodeposition of Cu[sub 2−x]Se and CuInSe[sub 2] Thin Films by the Induced Co-deposition Mechanism

Pulsed Electrodeposition of CuInSe2 Thin Films onto Mo-Glass Substrates

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