Fabrication and characterization of subwavelength nanostructures on freestanding GaN slab

Wang, Yongjin; Hu, Fangren; Kanamori, Yoshiaki; Sameshima, H.; Hane, Kazuhiro

doi:10.1364/oe.18.002940

Cited by 11 publications

(8 citation statements)

References 26 publications

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“…Such freestanding metamaterials can be experimentally realized by using undercutting techniques [40], [41]. They are arranged on a square lattice with 350-nm period.…”

Section: Resultsmentioning

confidence: 99%

Optical Forces in Metal/Dielectric/Metal Fishnet Metamaterials in the Visible Wavelength Regime

2012

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The optical force is calculated on a nanoparticle in close proximity to the surface of a fishnet metamaterial based on a metal/dielectric/metal film when illuminated at visible wavelengths. We show that the optical force can be enhanced by the strong magnetic dipole in the fishnet metamaterial. In contrast to other plasmonic nanostructures, which exhibit an attractive force in all regions, our presented structure provides good flexibility in pushing and dragging particular size nanoscale particles at certain distances above the surface of the structure. Therefore, it is suitable for size selection and optical trapping of nanoscale particles at illumination intensities of ð1 mW=m 2 Þ. At this power level, calculation shows that the optical force can be up to four orders of magnitude larger than the gravitational force for a 100-nm radius nanoparticle.

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“…Such freestanding metamaterials can be experimentally realized by using undercutting techniques [40], [41]. They are arranged on a square lattice with 350-nm period.…”

Section: Resultsmentioning

confidence: 99%

Optical Forces in Metal/Dielectric/Metal Fishnet Metamaterials in the Visible Wavelength Regime

2012

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“…The fabrication process, described in detail elsewhere [17-19], is schematically illustrated in Figure 1. Nanoscale gratings are patterned in ZEP520A resist using EB lithography, and the resist structures act as a mask for FAB etching of GaN (steps a-b).…”

Section: Fabricationmentioning

confidence: 99%

Patterned growth of InGaN/GaN quantum wells on freestanding GaN grating by molecular beam epitaxy

Wang

Hane

2011

Nanoscale Res Lett

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We report here the epitaxial growth of InGaN/GaN quantum wells on freestanding GaN gratings by molecular beam epitaxy (MBE). Various GaN gratings are defined by electron beam lithography and realized on GaN-on-silicon substrate by fast atom beam etching. Silicon substrate beneath GaN grating region is removed from the backside to form freestanding GaN gratings, and the patterned growth is subsequently performed on the prepared GaN template by MBE. The selective growth takes place with the assistance of nanoscale GaN gratings and depends on the grating period P and the grating width W. Importantly, coalescences between two side facets are realized to generate epitaxial gratings with triangular section. Thin epitaxial gratings produce the promising photoluminescence performance. This work provides a feasible way for further GaN-based integrated optics devices by a combination of GaN micromachining and epitaxial growth on a GaN-on-silicon substrate.PACS81.05.Ea; 81.65.Cf; 81.15.Hi.

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“…In our previous work, totally freestanding GaN microstructures were generated by a combination of fast atom beam (FAB) etching of GaN and deep reactive ion etching (DRIE) of silicon [11,12]. With Cl 2 gas as the process gas, FAB etching can effectively manufacture GaN to get nanometer scale features.…”

Section: Rie Of Gan and Frontside Dry-release Of Silicon Suspendedmentioning

confidence: 99%

Comb-drive GaN micro-mirror on a GaN-on-silicon platform

Wang

Sasaki

et al. 2011

J. Micromech. Microeng.

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We report here a double-sided process for the fabrication of a comb-drive GaN micro-mirror on a GaN-on-silicon platform. A silicon substrate is first patterned from the backside and removed by deep reactive ion etching, resulting in totally suspended GaN slabs. GaN microstructures including the torsion bars, movable combs and mirror plate are then defined on a freestanding GaN slab by the backside alignment technique and generated by fast atom beam etching with Cl2 gas. Although the fabricated comb-drive GaN micro-mirrors are deflected by the residual stress in GaN thin films, they can operate on a high resistivity silicon substrate without introducing any additional isolation layer. The optical rotation angles are experimentally characterized in the rotation experiments. This work opens the possibility of producing GaN optical micro-electro-mechanical-system (MEMS) devices on a GaN-on-silicon platform.

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Fabrication and characterization of subwavelength nanostructures on freestanding GaN slab

Cited by 11 publications

References 26 publications

Optical Forces in Metal/Dielectric/Metal Fishnet Metamaterials in the Visible Wavelength Regime

Optical Forces in Metal/Dielectric/Metal Fishnet Metamaterials in the Visible Wavelength Regime

Patterned growth of InGaN/GaN quantum wells on freestanding GaN grating by molecular beam epitaxy

Comb-drive GaN micro-mirror on a GaN-on-silicon platform

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