Patterned growth of InGaN/GaN quantum wells on freestanding GaN grating by molecular beam epitaxy

Wang, Yongjin; Hu, Fangren; Hane, Kazuhiro

doi:10.1186/1556-276x-6-117

Cited by 10 publications

(5 citation statements)

References 21 publications

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“…e degree of study has gradually deepened, from one-way effect analysis to higher-level research on interactive symbiotic interactions. e research methods have been consistently refined, from quantitative research to comprehensive research [21][22][23][24][25][26].…”

Section: Introductionmentioning

confidence: 99%

Rapid Prediction Algorithm for Economic Development Trend of Tourism Using Markov Chain

Qiao

2022

Mobile Information Systems

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The environment for tourist development will be increased further if the people-centered development concept is fully implemented, and people’s desire for a colorful tourism life will be boosted. This includes the new kinetic energy of digitalization and networking, which has contributed more and more to economic development. The people-centered development concept also includes the sudden new crown pneumonia outbreak that has had a major influence on the tourism sector; the tourism industry’s robust expansion will not change as a result. There is a reason to assume that tourism will become a key business that contributes to the long-term economic and social growth of China. With the Markov chain to forecast the development tendency of the tourism economy, this paper constructs characteristic indicators such as the number of duty-free shopping on outlying islands, the per capita spending of outlying island rabbit tax shopping, and the number of ecological civilization villages, using the era of free trade ports as a backdrop. The experimental results shows that the proposed idea of this paper is realistic and can have a significant impact towards designing a national ecological civilization pilot zone, international tourism consumption center, and the creation of tropical rainforest national parks.

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Section: Introductionmentioning

confidence: 99%

Rapid Prediction Algorithm for Economic Development Trend of Tourism Using Markov Chain

Qiao

2022

Mobile Information Systems

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“…After removing the residual resist, the GaN nanostructures were generated and cleaned for the epitaxial growth of GaN (steps (d)−(e)). The epitaxial growth of GaN was conducted by MBE with radio frequency nitrogen plasma as a gas source [18,19,21].…”

Section: Fabricationmentioning

confidence: 99%

Lateral epitaxial overgrowth of GaN on a patterned GaN-on-silicon substrate by molecular beam epitaxy

Wang¹,

Hu²,

Hane³

2011

Semicond. Sci. Technol.

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We report here the lateral epitaxial overgrowth (LEO) of GaN on a patterned GaN-on-silicon substrate by molecular beam epitaxy (MBE) growth with radio frequency nitrogen plasma as a gas source. Two kinds of GaN nanostructures are defined by electron beam lithography and realized on a GaN substrate by fast atom beam etching. The epitaxial growth of GaN by MBE is performed on the prepared GaN template, and the selective growth of GaN takes place with the assistance of GaN nanostructures. The LEO of GaN produces novel GaN epitaxial structures which are dependent on the shape and the size of the processed GaN nanostructures. Periodic GaN hexagonal pyramids are generated inside the air holes, and GaN epitaxial strips with triangular section are formed in the grating region. This work provides a promising way for producing novel GaN-based devices by the LEO of GaN using the MBE technique.

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“…The Ga-polar is the common polarity, and the Ga-polar GaN film can be grown by the metal-organic chemical vapor deposition (MOCVD) or the molecular beam epitaxy (MBE) on the sapphire (0001), Si (111), or the SiC substrates. [4][5][6][7][8][9][10][11] And the growth and the application of Gapolar GaN have been studied extensively and deeply. [6,[11][12][13][14][15][16][17] On the other hand, the N-polar is the rare polarity, and the Npolar GaN film has many advantages over the Ga-polar GaN film.…”

Section: Introductionmentioning

confidence: 99%

Characterization of the N-polar GaN film grown on C-plane sapphire and misoriented C-plane sapphire substrates by MOCVD

Hu¹,

Song²,

Su³

et al. 2022

Chinese Phys. B

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Gallium nitride (GaN) thin film of the nitrogen polarity (N-polar) was grown on C-plane sapphire and misoriented C-plane sapphire substrates respectively by metal-organic chemical vapor deposition (MOCVD). The misorientation angle is off-axis from C-plane toward M-plane of the substrates, and the angle is 2° and 4° respectively. The nitrogen polarity was confirmed by examining the images of the scanning electron microscope before and after the wet etching in potassium hydroxide (KOH) solution. The morphology was studied by the optical microscope and atomic force microscope. The crystalline quality was characterized by the X-ray diffraction. The lateral coherence length, the tilt angle, the vertical coherence length, and the vertical lattice-strain were acquired using the pseudo-Voigt function to fit the X-ray diffraction curves and then calculating with four empirical formulae. The lateral coherence length increases with the misorientation angle, because higher step density and shorter distance between adjacent steps can lead to larger lateral coherence length. The tilt angle increases with the misorientation angle, which means that the misoriented substrate can degrade the identity of crystal orientation of the N-polar GaN film. The vertical lattice-strain decreases with the misorientation angle. The vertical coherence length does not change a lot as the misorientation angle increases and this value of all samples is near to the nominal thickness of the N-polar GaN layer. This study helps to understand the influence of the misorientation angle of misoriented C-plane sapphire on the morphology, the crystalline quality, and the microstructure of N-polar GaN films.

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Patterned growth of InGaN/GaN quantum wells on freestanding GaN grating by molecular beam epitaxy

Cited by 10 publications

References 21 publications

Rapid Prediction Algorithm for Economic Development Trend of Tourism Using Markov Chain

Rapid Prediction Algorithm for Economic Development Trend of Tourism Using Markov Chain

Lateral epitaxial overgrowth of GaN on a patterned GaN-on-silicon substrate by molecular beam epitaxy

Characterization of the N-polar GaN film grown on C-plane sapphire and misoriented C-plane sapphire substrates by MOCVD

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