Lateral epitaxial overgrowth of GaN on a patterned GaN-on-silicon substrate by molecular beam epitaxy

Wang, Yongjin; Hu, Fangren; Hane, Kazuhiro

doi:10.1088/0268-1242/26/4/045015

Cited by 5 publications

(3 citation statements)

References 24 publications

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“…Most notably, SAG allows the reduction of threading dislocations at the grown surface by trapping and bending with lateral overgrowth 5 7 8 9 10 11 12 and it allows accommodation of thermal stresses during heteroepitaxial growth 13 14 . The SAG of arsenide and phosphide III-V materials has been analyzed quite extensively but less studies were reported for nitride materials except for nano-scale mask openings and spacings 6 7 9 15 16 17 18 19 20 21 . The interest in submillimeter scale heteroepitaxy and SAG have witnessed recently increased interest for large scale integration of light emitting diodes (LEDs) 22 23 24 and the development of high power devices 25 26 27 28 29 30 31 .…”

mentioning

confidence: 99%

Strong Geometrical Effects in Submillimeter Selective Area Growth and Light Extraction of GaN Light Emitting Diodes on Sapphire

Tanaka

Chen

Jungjohann

et al. 2015

Sci Rep

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Advanced semiconductor devices often utilize structural and geometrical effects to tailor their characteristics and improve their performance. We report here detailed understanding of such geometrical effects in the epitaxial selective area growth of GaN on sapphire substrates and utilize them to enhance light extraction from GaN light emitting diodes. Systematic size and spacing effects were performed side-by-side on a single 2” sapphire substrate to minimize experimental sampling errors for a set of 144 pattern arrays with circular mask opening windows in SiO2. We show that the mask opening diameter leads to as much as 4 times increase in the thickness of the grown layers for 20 μm spacings and that spacing effects can lead to as much as 3 times increase in thickness for a 350 μm dot diameter. We observed that the facet evolution in comparison with extracted Ga adatom diffusion lengths directly influences the vertical and lateral overgrowth rates and can be controlled with pattern geometry. Such control over the facet development led to 2.5 times stronger electroluminescence characteristics from well-faceted GaN/InGaN multiple quantum well LEDs compared to non-faceted structures.

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mentioning

confidence: 99%

Strong Geometrical Effects in Submillimeter Selective Area Growth and Light Extraction of GaN Light Emitting Diodes on Sapphire

Tanaka

Chen

Jungjohann

et al. 2015

Sci Rep

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“…These results demonstrate the potential of this pillar array template for GaN-based devices and freestanding substrates. Yongjin Wang have demonstrated the LEO of GaN on a patterned GaN-on-silicon substrate by MBE [35]. The epitaxial growth of GaN is performed on the prepared GaN template, and the selective growth of GaN takes place with the assistance of GaN nanostructures.…”

Section: Materials Of Iii-nitride Grown On Si (111)mentioning

confidence: 99%

The Research about the III-Nitride Compounds Epitaxially Grown on Si Substrate

Zhao

Hong

Liu

et al. 2011

AMR

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The III-nitride compounds epitaxially grown on Si substrate have attracted more and more attentions and some progress have been achieved. Many methods have been tried to tackle the issue which caused by the large lattice mismatch and thermal expansion coefficient mismatches between silicon substrate and the III-nitride compounds. This paper presents buffer layer technology, selective area and lateral epitaxial over growth technology, and presents the researches about the III-nitride devices. Semi polar and non-polar GaN films grown on Si (such as Si(110), Si(112), Si(001) et al.) also have been instructed. At the end of this paper, the development trend of epitaxial technology has been discussed.

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“…Among the approaches towards creating suspended III-nitride structures, growth of III-nitride on freestanding structured template is an emerging technology. During growth process, nanoscale structures locally change the growth conditions and thus, the selective growth can be achieved to generate epitaxial III-nitride structures with smooth facets [ 8 - 11 ]. Meanwhile, freestanding III-nitride structures are formed by growth method and free of the etching damage.…”

Section: Introductionmentioning

confidence: 99%

III-Nitride grating grown on freestanding HfO2 gratings

Wang

et al. 2011

Nanoscale Res Lett

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We report here the epitaxial growth of III-nitride material on freestanding HfO2 gratings by molecular beam epitaxy. Freestanding HfO2 gratings are fabricated by combining film evaporation, electron beam lithography, and fast atom beam etching of an HfO2 film by a front-side silicon process. The 60-μm long HfO2 grating beam can sustain the stress change during the epitaxial growth of a III-nitride material. Grating structures locally change the growth condition and vary indium composition in the InGaN/GaN quantum wells and thus, the photoluminescence spectra of epitaxial III-nitride grating are tuned. Guided mode resonances are experimentally demonstrated in fabricated III-nitride gratings, opening the possibility to achieve the interaction between the excited light and the grating structure through guided mode resonance.PACS: 78.55.Cr; 81.65.Cf; 81.15.Hi.

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Lateral epitaxial overgrowth of GaN on a patterned GaN-on-silicon substrate by molecular beam epitaxy

Cited by 5 publications

References 24 publications

Strong Geometrical Effects in Submillimeter Selective Area Growth and Light Extraction of GaN Light Emitting Diodes on Sapphire

Strong Geometrical Effects in Submillimeter Selective Area Growth and Light Extraction of GaN Light Emitting Diodes on Sapphire

The Research about the III-Nitride Compounds Epitaxially Grown on Si Substrate

III-Nitride grating grown on freestanding HfO2 gratings

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