Fabrication and characterization of ZnO thin film using sol–gel method

Hashim, Awatif; Jaafar, Mastura; Ghazai, Alaa J.; Ahmed, Nafees

doi:10.1016/j.ijleo.2011.12.059

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Introduction3

The Crystalline Structure Co-doped Zno Thin Films1

Xrd Results Of Films1

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Cited by 37 publications

(14 citation statements)

References 3 publications

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“…Additional information on structural properties can be obtained from the residual stress measurements calculated by the following formula [23].…”

Section: The Crystalline Structure Co-doped Zno Thin Filmsmentioning

confidence: 99%

The crystalline structure, conductivity and optical properties of Co-doped ZnO thin films

Benramache

Benhaoua

Belahssen

2014

Optik

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“…Additional information on structural properties can be obtained from the residual stress measurements calculated by the following formula [23].…”

Section: The Crystalline Structure Co-doped Zno Thin Filmsmentioning

confidence: 99%

The crystalline structure, conductivity and optical properties of Co-doped ZnO thin films

Benramache

Benhaoua

Belahssen

2014

Optik

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“…Zinc oxide (ZnO) is a very important material for many applications like microelectronics, short-wavelength light-emitting devices, lasers, field emission devices, solar cells and gas sensors [1][2][3][4][5]. It is a near-stoichiometric n-type semiconductor with low resistivity values of ZnO films may be adjusted between 10 −3 cm and 10 −4 cm by changing the annealing conditions and doping [6].…”

Section: Introductionmentioning

confidence: 99%

Effect of optical gap energy on the Urbach energy in the undoped ZnO thin films

Belahssen

Temam

Lakel

et al. 2015

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“…The grain sizes of the crystallites were determined from XRD data. The crystallite grain size D can be estimated using the Scherrer formula [23]:…”

Section: Xrd Results Of Filmsmentioning

confidence: 99%

Annealing effects of ZnO thin films on p-Si(100) substrate deposited \newline by PFCVAD

Kara¹,

Tüzemen²,

Esen³

2014

Turk J Phys

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Abstract:In this study, ZnO films were prepared on p-Si substrates using the pulsed filtered cathodic vacuum arc deposition (PFCVAD) method. We report the effect of annealing temperature on structural and optical properties. The crystallographic structure and the size of the crystallites in the films were studied by means of X-ray diffraction. The films had a weak peak (100) orientation at 2 θ =∼ 32• . X-ray diffraction analysis of the as-deposited ZnO and the film annealed at 850• C showed a strong ZnO (002) diffraction peak centered at 34.1 • and 34.5• , respectively. The (004) peak was seen for film annealed at 850 • C. ZnO film annealed at 850• C had higher grain size and better crystallinity.Optical properties of the ZnO films were studied using a UV-Vis-NIR spectrophotometer. The optical band gap of the films was determined using the reflectance spectra by means of the Kubelka-Munk formula. From the optical properties, the band gap energy estimated for films as-deposited and annealed at 850 • C was 3.00 and 3.28 eV, respectively. TheRaman scattering spectra of the films was observed at a laser power of 2 mW.

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Fabrication and characterization of ZnO thin film using sol–gel method

Cited by 37 publications

References 3 publications

The crystalline structure, conductivity and optical properties of Co-doped ZnO thin films

The crystalline structure, conductivity and optical properties of Co-doped ZnO thin films

Effect of optical gap energy on the Urbach energy in the undoped ZnO thin films

Annealing effects of ZnO thin films on p-Si(100) substrate deposited \newline by PFCVAD

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