Fabrication and electrical characterisation of the Ti/GaTe/p-Si device under 18 MeV electron irradiation

In this study, an Al/Orange G (OG)/p-Si device was constructed using a solution processing method. The electronic and interfacial features of the Al/OG/p-Si structure under 60Co gamma radiation were determined using the Cheung and Norde techniques. The barrier height (ɸb), ideality factor (n), and series resistance (Rs) of the Al/OG/p-Si diode were computed from the current-voltage (IV) measurements. Then, the n and ɸb parameters were extracted as n=2.65±0.07 and ɸb=0.76±0.05 eV from the IV results for the irradiated Al/OG/p-Si structure. It has been seen that these parameters were higher than those of the non-irradiated sample. In addition, it was observed that the rectification ratio of the diode decreased after irradiation, particularly in the wide voltage region. Moreover, the capacitance-voltage (CV) measurements showed that the capacitance values of the irradiated Al/OG/p-Si device increased, and the conductance (G) values in the inversion section for low frequencies increased because of the formation of electron-hole pairs or crystalline changes after irradiation. Furthermore, the irradiated and non-irradiated samples were evaluated by X-ray diffraction (XRD), and shifts in the diffraction angles and traces of microstructural changes were observed in the irradiated samples. Thus, it has been found that the radiation has remarkable effects on the dielectric parameters and the electronic and microstructural features of the Al/OG/p-Si structure.

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Fabrication and electrical characterisation of the Ti/GaTe/p-Si device under 18 MeV electron irradiation

Cited by 3 publications

References 31 publications

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The performance of the anthraquinone/p-Si and the pyridine/p-Si rectifying device under X-ray irradiation

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