Fabrication and electrical properties of printed three-dimensional integrated carbon nanotube PMOS inverters on flexible substrates

Deng, Jie; Li, Xiaoqian; Li, Min; Wang, Xin; Shao, Shuangshuang; Li, Jiaqi; Fang, Yuxiao; Zhao, Jianwen

doi:10.1039/d1nr08056c

Cited by 8 publications

(7 citation statements)

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“…For example, a vertically stacked complementary inverter was fabricated by using p-type CNTFET with n-type IGZO TFT, and the integrated temperature sensor was demonstrated [ 102 ]. In addition, a CNT-based gas sensor in which the electrical properties of CNTs were modulated by gas molecules was also implemented [ 19 ]. Furthermore, the integrated electronic system based on more complicated vertically stacked structure including CNTFET was demonstrated [ 18 ], which will be discussed in the following section.…”

Section: Vertically Integrated Electronic Devices Based On Emerging S...mentioning

confidence: 99%

“…j Illustration of an ammonia gas sensor device based on a vertically stacked SWCNT inverter. k Shift of output voltage curve of vertically stacked SWCNT inverter with ammonia gas concentration [ 19 ]. Copyright © 2022, RSC Publishing.…”

Section: Emerging Applications Based On Vertical Integrationmentioning

confidence: 99%

“…Deng et al [ 19 ] developed a single-walled carbon nanotube (SWCNT) integrated circuit on the PI substrate by printing process. The ionic liquid crosslinked PVP (IL-c-PVP) was utilized as a dielectric layer, which enabled low operating voltage of SWCNT TFT (< 1 V) and gas sensing.…”

Section: Emerging Applications Based On Vertical Integrationmentioning

confidence: 99%

“…As an alternative approach, vertical integration has been considered a promising strategy to circumvent the issues in conventional silicon MOSFETs. Rather than top-down fabrication of silicon technologies, tremendous efforts on bottom-up process-based transistors and electronics have been made by adopting emerging semiconductor materials including transition metal dichalcogenides (TMDs) [ 12 – 14 ], graphene [ 15 , 16 ], carbon nanotubes (CNTs) [ 17 – 19 ], organics [ 20 – 23 ], metal oxides [ 24 , 25 ], and combinations of those materials [ 26 , 27 ]. The largest difference from the conventional silicon MOSFETs is that each material can be simply deposited, which makes layer-by-layer vertical stacking available.…”

Section: Introductionmentioning

confidence: 99%

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Vertically Integrated Electronics: New Opportunities from Emerging Materials and Devices

et al. 2022

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Vertical three-dimensional (3D) integration is a highly attractive strategy to integrate a large number of transistor devices per unit area. This approach has emerged to accommodate the higher demand of data processing capability and to circumvent the scaling limitation. A huge number of research efforts have been attempted to demonstrate vertically stacked electronics in the last two decades. In this review, we revisit materials and devices for the vertically integrated electronics with an emphasis on the emerging semiconductor materials that can be processable by bottom-up fabrication methods, which are suitable for future flexible and wearable electronics. The vertically stacked integrated circuits are reviewed based on the semiconductor materials: organic semiconductors, carbon nanotubes, metal oxide semiconductors, and atomically thin two-dimensional materials including transition metal dichalcogenides. The features, device performance, and fabrication methods for 3D integration of the transistor based on each semiconductor are discussed. Moreover, we highlight recent advances that can be important milestones in the vertically integrated electronics including advanced integrated circuits, sensors, and display systems. There are remaining challenges to overcome; however, we believe that the vertical 3D integration based on emerging semiconductor materials and devices can be a promising strategy for future electronics.

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Section: Vertically Integrated Electronic Devices Based On Emerging S...mentioning

confidence: 99%

Section: Emerging Applications Based On Vertical Integrationmentioning

confidence: 99%

Section: Emerging Applications Based On Vertical Integrationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Vertically Integrated Electronics: New Opportunities from Emerging Materials and Devices

et al. 2022

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“…[13][14][15][16][17] The fine-pitch interconnect technology has become one of the important research areas for the microelectronics industry to meet the increasing demands of downsizing, functionalization, and integration. [18][19][20][21] Anisotropic materials can achieve different functions in different directions. [22][23][24] As one type of interconnection materials for electronic components, anisotropic conductive films (ACFs) possess a specific directional conductivity.…”

Section: Introductionmentioning

confidence: 99%

Printing nanoparticle-based isotropic/anisotropic networks for directional electrical circuits

Chen

Pan

et al. 2022

Nanoscale

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Ultra‐Flexible Monolithic 3D Complementary Metal‐Oxide‐Semiconductor Electronics

Zhang,

Wang,

Zhu

et al. 2023

Adv Funct Materials

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Flexible electronics based on complementary metal‐oxide‐semiconductor (CMOS) technology have enabled a smart soft world. However, the trade‐off among flexibility, density, and electrical performance has been a long‐lasting unresolved issue. Here, a monolithic three‐dimensional (M3D) CMOS design is proposed to address this problem and realize ultra‐flexible electronics with high electronic‐performance and integration. This design utilizes vertically stacked p‐type carbon nanotube transistors and n‐type indium gallium zinc oxide ones, which share common gates and drains, saving the inter tier vias required in the traditional M3D structure to reduce routing and improve flexibility. With this design, CMOS logic gates, multi‐stage circuits, ring oscillators (ROs) and memory modules, are demonstrated. This design enables circuits to save up to 45% of area compared with their planar counterparts. Particularly, inverters exhibit a record‐high gain of 191, and 55‐stage ROs can operate well even after bending at a 500‐µm radius for 50 cycles, exhibiting the highest flexibility among the reported ones. The ultra‐flexible and high‐integration RO enables a wearable light recorder to collect harmful blue light shining into human eyes by simply attaching the circuits on a contact lens. This integration method provides possibilities for developing complex‐function wearable electronics.

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Fabrication and electrical properties of printed three-dimensional integrated carbon nanotube PMOS inverters on flexible substrates

Abstract: The low resolution of current printing technology (usually 10-100 μm) limits the number of printed thin film transistors (TFTs) per processable area, resulting in the low integration of printed circuits....

Cited by 8 publications

References 58 publications

Vertically Integrated Electronics: New Opportunities from Emerging Materials and Devices

Vertically Integrated Electronics: New Opportunities from Emerging Materials and Devices

Printing nanoparticle-based isotropic/anisotropic networks for directional electrical circuits

Ultra‐Flexible Monolithic 3D Complementary Metal‐Oxide‐Semiconductor Electronics

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