Design and modification of interfaces,
always a critical issue
for semiconductor devices, has become a primary tool to harness the
full potential of halide perovskite (HaP)-based optoelectronics, including
photovoltaics and light-emitting diodes. In particular, the outstanding
improvements in HaP solar cell performance and stability can be primarily
ascribed to a careful choice of the interfacial layout in the layer
stack. In this review, we describe the unique challenges and opportunities
of these approaches (section 1). For this purpose, we first elucidate
the basic physical and chemical properties of the exposed HaP thin
film and crystal surfaces, including topics such as surface termination,
surface reactivity, and electronic structure (section 2). This is
followed by discussing experimental results on the energetic alignment
processes at the interfaces between the HaP and transport and buffer
layers. This section includes understandings reached as well as commonly
proposed and applied models, especially the often-questionable validity
of vacuum level alignment, the importance of interface dipoles, and
band bending as the result of interface formation (section 3). We
follow this by elaborating on the impact of the interface formation
on device performance, considering effects such as chemical reactions
and surface passivation on interface energetics and stability. On
the basis of these concepts, we propose a roadmap for the next steps
in interfacial design for HaP semiconductors (section 4), emphasizing
the importance of achieving control over the interface energetics
and chemistry (i.e., reactivity) to allow predictive power for tailored
interface optimization.