Fabrication and performance of novel RF spiral inductors on silicon

Wang, Xi-Ning; Zhao, Xiaolin; Zhou, Yong; Dai, Xin; Cai, Bingchu

doi:10.1016/j.mejo.2004.11.007

Cited by 6 publications

(6 citation statements)

References 10 publications

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“…On the other hand placing a high resistive layer underneath the inductor can minimize the substrate losses. Lately optimized 3D structures and implementations of RF integrated inductors are suggested to overcome all of these limitations and improve the RF integrated inductors performance [4,5].…”

Section: Circuit Descriptionmentioning

confidence: 99%

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CMOS Ultra-Wideband Low Noise Amplifier Design

Yousef

Jia

Pokharel

et al. 2013

International Journal of Microwave Science and Technology

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This paper presents the design of ultra-wideband low noise amplifier (UWB LNA). The proposed UWB LNA whose bandwidth extends from 2.5 GHz to 16 GHz is designed using a symmetric 3D RF integrated inductor. This UWB LNA has a gain of 11 ± 1.0 dB and a NF less than 3.3 dB. Good input and output impedance matching and good isolation are achieved over the operating frequency band. The proposed UWB LNA is driven from a 1.8 V supply. The UWB LNA is designed and simulated in standard TSMC 0.18 µm CMOS technology process.

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Section: Circuit Descriptionmentioning

confidence: 99%

“…Design, development, and performance improvement of RF integrated inductors represent a challenging work. Achieving high integration level and cost minimization of RFICs are obstructed because of the difficulties facing the RF integrated inductors designers which are related to obtaining high quality factors [4][5][6].…”

Section: Introductionmentioning

confidence: 99%

CMOS Ultra-Wideband Low Noise Amplifier Design

Yousef

Jia

Pokharel

et al. 2013

International Journal of Microwave Science and Technology

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“…Nowadays, because of the rapidly growing demands in wireless communication products and devices, high performance and low cost on-chip radio-frequency devices are needed [1]. The design requirements of these devices include low cost, low supply voltage, reduction of consumed power, low noise, high and flat power gain, high frequency of operation and low distortion.…”

Section: Introductionmentioning

confidence: 99%

“…Achieving a high quality factor of the integrated inductors is one of the strong limitations in achieving a high integration level and additional reduction of fabrication costs in the frontend of microwave transceivers and general RF systems. The ohmic losses of thin metals in addition to the substrate losses of conductive substrates are the most apparent restrictions on improvement of the quality factor (Q) of integrated spiral inductors [1] and [2].…”

Section: Introductionmentioning

confidence: 99%

“…Production of high resistive silicon substrate, employing thick dielectric layers and employment of higher conductivity metal seem to be the most known ones. The first and second methods decrease the losses of the substrate and the later one reduces the ohmic losses [1]. To overcome the area problem, stacked inductors can be proposed using multiple metallization layers introducing the stacked or 3D integrated inductor.…”

Section: Introductionmentioning

confidence: 99%

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Design of 3D integrated inductors for RFICs

Yousef

Jia

Allam

et al. 2012

2012 Japan-Egypt Conference on Electronics, Communications and Computers

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This paper discusses the design of 3D monolithic integrated inductors. The proposed 3D radio frequency (RF) integrated inductors have high inductance (L) values with an enhanced quality factors (Q). A new proposed method for 3D integrated inductors design is presented. A wide range of inductances and quality factor values can be realized. The proposed 3D inductors were designed in TSMC 0.18 μm technology and simulated using momentum.Keywords-3D monolithic integrated inductor; inductance(L) and quality factor (Q)

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Conception and Manufacturing of a Planar Inductance on NiFe Substrate

Medjaoui

Hamid

Guettaf

et al. 2019

Trans. Electr. Electron. Mater.

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The present paper presents the study, realization and characterization of a micro-coil sandwiched using a relatively thick layer of magnetic material. The integration of this micro-coil with as a starting point a set of specifications, requires the following steps: Identification and validation of geometric parameters for the calculation of electrical parameters. Losses dissipated as heat in these electronic systems are becoming a major concern for designers. This prompted to take into account the thermal design. The results obtained have allowed to realize a micro-coil micro square planar coil sandwiched shaped between two magnetic materials. Several carried measures focused on the inductance and resistance which are related to the frequency f, the module and phase of the impedance, and the gap g. The operation of these data is used to trace the evolution of the inductance value L s , the quality factor Q and the resistor R s as a function of frequency.

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Fabrication and performance of novel RF spiral inductors on silicon

Cited by 6 publications

References 10 publications

CMOS Ultra-Wideband Low Noise Amplifier Design

CMOS Ultra-Wideband Low Noise Amplifier Design

Design of 3D integrated inductors for RFICs

Conception and Manufacturing of a Planar Inductance on NiFe Substrate

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