Here
we demonstrate near-infrared (NIR) light-sensing organic light-dependent
resistors (OLDRs), so-called organic photoresistors (OPRTs), which
consist of solution-processed NIR light-absorbing films of poly[{2,5-bis(2-octyldodecyl)-3,6-bis(thien-2-yl)-pyrrolo[3,4-c]pyrrole-1,4-diyl}-co-{2,2′-(2,1,3-benzothiadiazole)-5,5′-diyl}]
(PODTPPD-BT). The present NIR-OPTRs were fabricated in a planar geometry
by forming two aluminum electrodes in parallel on the PODTPPD-BT films
with three different thicknesses (40, 100, and 160 nm). The sensing
characteristics of NIR-OLDRs were examined using a NIR laser diode
featuring a wavelength (λ) of λ = 905 nm that is one of
the popular wavelengths employed for light detection and ranging (LiDAR)
systems. In the dark condition, the electrical resistance (R
H) of devices in the horizonal direction was
marginally changed with the thickness of PODTPPD-BT films. However,
the R
H values were remarkably reduced
upon the NIR light illumination for all devices and were strongly
dependent on the NIR light intensity. Thermal annealing of devices
delivered greatly improved current responses leading to a huge R
H reduction (by ca. 80%) and excellent sensing
stability, even though only 49% improvement in R
H was achieved by thermal annealing of films.