Fabrication and properties of p-type K doped Zn1−Mg O thin film

Electrical Conductivity Measurements of Al-Doped ZnO Semiconductor in High Temperature

“…Material doping for the n-type ZnO includes boron, aluminum, and fluorine [1,2]. While doping material for p-type ZnO includes potassium [3], lithium, copper, phosphorus, and arsenic [4]. In this research, the focus is the development of a semiconductor material doped with aluminum ZnO.…”

“…In this study, ZnO for thermoelectric generator made in the form of pellets with high temperature. Testing of electrical conductivity in the semiconductor ZnO mostly done in the form of semiconductor thin film [3,5]. Several studies have linked the semiconductor ZnO pellet form has also been done [1,2,6,7].…”

Effect of Er concentration on surface and optical properties of K doped ZnO sol–gel thin films

“…In previous study, codoping methods have been tried to realize p-type ZnO conversion by using Al-N, In-N, Na-H, Mg-Li, Li-N, etc., and the goal is to facilitate the solubility of acceptor and improve the p-type stability [19][20][21][22][23]. Previously only magnesium (Mg) has been codoped with K in the ZnO matrix [24] for p-type conductivity and we present here for the first time (K, Er) codoped ZnO for studying the surface and optical properties. Though the optical properties are studied individually for K doped ZnO and Er doped ZnO, till now there is no work on the optical properties of the (K, Er) codoped ZnO thin films.…”

MgZnO/MgO strained multiple-quantum-well nanocolumnar films: Stress-induced structural transition and deep ultraviolet emission

“…The large energy-band offset between them will make the carrier confinement stronger than that in the conventional ZnO/MgZnO QWs. However, it is known that MgZnO usually stabilizes in a wurtzite structure (hexagonal symmetry) when the Mg content is below 33 at.% [5][6][7], while MgO has a rock-salt structure (cubic symmetry). Their structural difference and lattice mismatch will lead to a large strain and a high density of defects in QW films.…”