Fabrication and properties of wafer-scale nanoporous GaN distributed Bragg reflectors with strong phase-separated InGaN/GaN layers

Zhao, Chongchong; Yang, Xiaokun; Shen, Lüyang; Luan, Caìna; Liu, Jianqiang; Ma, Jin; Xiao, Hongdi

doi:10.1016/j.jallcom.2019.03.036

Cited by 10 publications

(3 citation statements)

References 40 publications

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“…The width of the space charge region ( d SCR ) in the MQW layer is 42.49 nm on the basis of eq . , d normalS normalC normalR = 2 ε ε 0 U q N D …”

Section: Resultsmentioning

confidence: 99%

Significantly Increased Luminescence Properties of the Wafer-Scale Mesoporous GaN-Based LEDs with Mesoporous GaN-Distributed Bragg Reflectors

Cao,

Yan,

Sun

et al. 2024

Crystal Growth & Design

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Mesoporous GaN-based multiple quantum wells (MP MQWs) with MP GaN-distributed Bragg reflectors (MP GaN DBRs) are obtained via electrochemical etching in a HNO 3 solution. Wafer-scale MP MQWs with MP GaN DBRs have a smooth surface, low root-mean-square roughness (R RMS ), and high reflectivity. Then, the p-GaN layer is grown on the MP MQWs with the MP GaN DBR substrate. Compared with as-grown light-emitting devices (AG LEDs), MP LEDs with MP GaN DBRs possess an increased and blue-shifted luminescence emission. The luminescence enhancement results from the reduced density of dislocations of MP MQWs and the highly reflective effect of MP GaN DBRs. Also, the blue shift is due to reduced stress in the MQW layer.

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“…The width of the space charge region ( d SCR ) in the MQW layer is 42.49 nm on the basis of eq . , d normalS normalC normalR = 2 ε ε 0 U q N D …”

Section: Resultsmentioning

confidence: 99%

Significantly Increased Luminescence Properties of the Wafer-Scale Mesoporous GaN-Based LEDs with Mesoporous GaN-Distributed Bragg Reflectors

Cao,

Yan,

Sun

et al. 2024

Crystal Growth & Design

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“…Zhao et al reported NP-GaN DBRs with large-area ( > 1 cm 2 ) and high light reflectivity fabricated by ECE. The enhancement coefficient of the total PL intensity of the prepared sample was about 3.2 compared with the reference sample [59]. Fabricate NP-GaN with a periodic pore structure, similar to a grating structure, so it can generate Bragg scattering.…”

Section: Dbrmentioning

confidence: 94%

The development and applications of nanoporous gallium nitride in optoelectronics: a review

Ying

Liang

Guo

et al. 2023

Semicond. Sci. Technol.

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The development of nanoporous gallium nitride has widened the material properties and applications in third generation semiconductor area. Nanoporous gallium nitride has been used in laser emitters, light-emitting diodes, optical sensors, and optical energy storage devices. In this paper, we reviewed the most recent progress in the nanoporous GaN field by electrochemical etching. The properties of etched GaN have many superior properties compared with original GaN templates, such as stronger photoluminescence intensity, thermal conductivity, piezo-electricity, more accessible area, stress relief and refractive index. These advantages will make GaN more widely used in the field of optics and optoelectronics. Pore formation can be controlled by adjusting the applied potential and etching time. The nanoporous GaN makes the material of GaN have broader application prospects. We introduced in detail the application prospects of different GaN based processes and subsequent application methods in optoelectronics, sensors, and materials themselves. This review will help to improve further development of nanoporous GaN applications.

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“…At present, laterally ECE and vertically-laterally ECE are the two main methods for preparing nanoporous (NP)-DBRs 12 , 13 . Using these two methods, GaN-based NP-DBRs have been widely reported in the blue and near-ultraviolet spectral regions 14 – 17 . NP-DBRs with high reflectivity (> 95%) were achieved and have been successfully coupled into LEDs, detectors, VCSELs and other devices, which demonstrated the viability of the NP-DBRs 10 , 18 – 20 .…”

Section: Introductionmentioning

confidence: 99%

Fabrication of wafer-scale nanoporous AlGaN-based deep ultraviolet distributed Bragg reflectors via one-step selective wet etching

Zhao

Shan

Zheng

et al. 2022

Sci Rep

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In this paper, we reported on wafer-scale nanoporous (NP) AlGaN-based deep ultraviolet (DUV) distributed Bragg reflectors (DBRs) with 95% reflectivity at 280 nm, using epitaxial periodically stacked n-Al0.62Ga0.38N/u-Al0.62Ga0.38N structures grown on AlN/sapphire templates via metal–organic chemical vapor deposition (MOCVD). The DBRs were fabricated by a simple one-step selective wet etching in heated KOH aqueous solution. To study the influence of the temperature of KOH electrolyte on the nanopores formation, the amount of charge consumed during etching process was counted, and the surface and cross-sectional morphology of DBRs were characterized by Scanning electron microscopy (SEM) and atomic force microscopy (AFM). As the electrolyte temperature increased, the nanopores became larger while the amount of charge reduced, which revealed that the etching process was a combination of electrochemical and chemical etching. The triangular nanopores and hexagonal pits further confirmed the chemical etching processes. Our work demonstrated a simple wet etching to fabricate high reflective DBRs, which would be useful for AlGaN based DUV devices with microcavity structures.

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Fabrication and properties of wafer-scale nanoporous GaN distributed Bragg reflectors with strong phase-separated InGaN/GaN layers

Cited by 10 publications

References 40 publications

Significantly Increased Luminescence Properties of the Wafer-Scale Mesoporous GaN-Based LEDs with Mesoporous GaN-Distributed Bragg Reflectors

Significantly Increased Luminescence Properties of the Wafer-Scale Mesoporous GaN-Based LEDs with Mesoporous GaN-Distributed Bragg Reflectors

The development and applications of nanoporous gallium nitride in optoelectronics: a review

Fabrication of wafer-scale nanoporous AlGaN-based deep ultraviolet distributed Bragg reflectors via one-step selective wet etching

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