Abstract:Ultrahigh density vertical magnetoresistive random access memory (invited)Long term stability of dry etched magnetoresistive random access memory elements High density submicron magnetoresistive random access memory (invited)
“…Recently, a growing interest was attracted by a new MRAM cell design concept in which the storage element is made in the shape of a submicron-sized ring 5,6,7,8,9,10,11,12,13,14,15,16 . As was proposed in Ref.…”
mentioning
confidence: 99%
“…Note that in the latter case the current densities required to affect the magnetization state are found to be quite high (exceeding 10 18,20 . Another proposal 7,13 has been to pass a current of variable polarity vertically through the sandwich structure, so that the resulting circular magnetic field favors a particular vortex orientation 27 . Here, we propose a new principle for the design of a robust MRAM cell based on thin film ferromagnetic nanorings (see Fig.…”
We propose a design for the magnetic memory cell which allows an efficient storage, recording, and readout of information on the basis of thin film ferromagnetic nanorings. The information bit is represented by the polarity of a stable 360• domain wall introduced into the ring. Switching between the two magnetization states is achieved by the current applied to a wire passing through the ring, whereby the 360• domain wall splits into two charged 180• walls, which then move to the opposite extreme of the ring to recombine into a 360• wall of the opposite polarity.
“…Recently, a growing interest was attracted by a new MRAM cell design concept in which the storage element is made in the shape of a submicron-sized ring 5,6,7,8,9,10,11,12,13,14,15,16 . As was proposed in Ref.…”
mentioning
confidence: 99%
“…Note that in the latter case the current densities required to affect the magnetization state are found to be quite high (exceeding 10 18,20 . Another proposal 7,13 has been to pass a current of variable polarity vertically through the sandwich structure, so that the resulting circular magnetic field favors a particular vortex orientation 27 . Here, we propose a new principle for the design of a robust MRAM cell based on thin film ferromagnetic nanorings (see Fig.…”
We propose a design for the magnetic memory cell which allows an efficient storage, recording, and readout of information on the basis of thin film ferromagnetic nanorings. The information bit is represented by the polarity of a stable 360• domain wall introduced into the ring. Switching between the two magnetization states is achieved by the current applied to a wire passing through the ring, whereby the 360• domain wall splits into two charged 180• walls, which then move to the opposite extreme of the ring to recombine into a 360• wall of the opposite polarity.
“…Most of researches in ring shape devices revealing uniform and specific switching process were only focused on magnetic single layer [3,4]. Recently, the concept was realized in current perpendicular to the plane giant magnetoresistance (CPP-GMR) systems [5] and for the first time in CPP-MTJ system in our previous work [6]. In this study, the size dependence of magnetization reversal of MTJ rings was investigated.…”
“…The vortex state can have either clockwise (CW) or counterclockwise (CCW) circulation, which have degenerate energies in uniform applied fields. Nanorings have been proposed as data storage elements, [1][2][3][4][5][6][7][8][9] taking advantage of the stable equilibrium CW and CCW configurations with no stray field. Understanding and controlling the switching of nanorings is of fundamental interest and critical to progress towards data storage applications.…”
We experimentally investigated the switching from onion to vortex states in asymmetric cobalt nanorings by an applied circular field. An in-plane field is applied along the symmetric or asymmetric axis of the ring to establish domain walls (DWs) with symmetric or asymmetric polarization. A circular field is then applied to switch from the onion state to the vortex state, moving the DWs in the process. The asymmetry of the ring leads to different switching fields depending on the location of the DWs and direction of applied field. For polarization along the asymmetric axis, the field required to move the DWs to the narrow side of the ring is smaller than the field required to move the DWs to the larger side of the ring. For polarization along the symmetric axis, establishing one DW in the narrow side and one on the wide side, the field required to switch to the vortex state is an intermediate value.
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