Fabrication of a Fractional Order Capacitor With Desired Specifications: A Study on Process Identification and Characterization

Krishna, M. S Deepak; Das, Saptarshi; Biswas, Karabi; Goswami, Bhaswati

doi:10.1109/ted.2011.2166763

Cited by 167 publications

(44 citation statements)

References 13 publications

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“…In the circuit theory, the fractional-order element (FOE) is considered as a generalized element that covers the conventional three passive elements which are inductor, resistor, and capacitor when the fractional-order parameter equals −1, 0, and 1 respectively. One of the realizations of the half-order capacitor can be obtained by dipping a capacitive-type probe, coated with a porous film of polymer of particular thickness, into a polarizable medium [25].…”

Section: Fractional-order Modelmentioning

confidence: 99%

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Memristor Mathematical Models and Emulators

Radwan

Fouda

2015

Studies in Systems, Decision and Control

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Recently, different mathematical models describing the generic memristors have been introduced [1][2][3]. But, the first model of the memristor was introduced by HP in [4], where the memristor current voltage relationship was described bywhere i(t) represents the current through the memristor, v(t) is the voltage across the memristor, R on and R off are the minimum and maximum achievable resistances of the memristor, respectively. The memristor resistance depends on state variable x d (t) which is the ratio between the doped region length and the full length D of the memristor and is given byIntegrating (3.2) and substituting in (3.1); assuming zero initial condition for the current, the memristance R m can then be given by (3.3)where η ∈ −1, 1 represents the memristor polarity, k =/C; μ v is the ion mobility, and R in is the initial resistance of the memristor.

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Section: Fractional-order Modelmentioning

confidence: 99%

“…In case of applying step input voltage across the memristor the input signal is defined by 25) where u(t) is the unit step function. By substituting from (3.25) into (3.24), then the resistance of the memristor is given by…”

Section: Step Input Voltagementioning

confidence: 99%

Memristor Mathematical Models and Emulators

Radwan

Fouda

2015

Studies in Systems, Decision and Control

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“…In [7] graphene-percolated polymer composite was used for manufacturing a fractional-order capacitor while in [8] and [9] other metal-liquid interface techniques were reported. However, for systems on chip, fully integrated solutions are required.…”

Section: Introductionmentioning

confidence: 99%

Electronically Tunable Fully Integrated Fractional-Order Resonator

Τσιριμώκου

Psychalinos

Elwakil

et al. 2018

IEEE Trans. Circuits Syst. II

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“…[1][2][3][4][5][6][7][8][9][10][11] Thanks to the additional parameter, namely, the fractional order (see supplementary material Sec. S1 and Fig.…”

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confidence: 99%

“…It is important to mention here that, previously developed FOCs do not only suffer from narrow CPZs but also have other shortcomings that limit their use in modern electronic devices and systems. For instance, liquid electrode based (LEB) FOCs cannot be integrated with microelectronics, 6 the CPA of fractal tree (FT) FOCs cannot be tuned, 11 the FOCs making use of operational trans-conductance amplifiers (OTAs) are power hungry, [47][48][49] and the CPA of the FOCs fabricated using carbon-ferroelectric polymer composites is very sensitive to the filler ratio of the carbon 1,3 and it has a low dynamic range. 46 On the other hand, the FOCs proposed in this work are fully compatible with PCBs, passive, and have a stable CPA over a broader frequency range.…”

mentioning

confidence: 99%