Fabrication of a nanosize Si-tip coated with a thin diamond-like carbon film

Jung, M.; Kim, D.W.; Choi, Seong Soo; Kim, Yong Suk; Kuk, Young; Park, K.C.; Jang, Jin

doi:10.1016/s0040-6090(96)09301-7

Cited by 12 publications

(9 citation statements)

References 18 publications

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“…At the same time, different organic "blocking" layers for electrons and holes were tested with success [3]. On the other hand, amorphous carbon (a-C) films have attracted considerable attention as coating in vacuum microelectronics where the work function of cold cathode is essentially decreased [4][5][6]. In a previous work [7] we demonstrated the possibility to use amorphous carbon nitride (a-C:N) films as an efficient electron injection layer in OLEDs.…”

Section: Introductionmentioning

confidence: 99%

Amorphous carbon nitride thin films as buffer layer in organic LEDs

Reyes

Legnani

Cremona

et al. 2004

phys. stat. sol. (c)

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Amorphous carbon nitride thin films (a‐C:N) deposited by diode rf sputtering were used as buffer layers in organic light emitting diodes. The devices consist of the heterojunction structure: indium tin oxide (ITO)/a‐C:N/Hole Transport Layer (HTL)/ Emitting Layer (EL)/Electron Transport Layer (ETL)/Al. As a hole transporting layer (HTL) a thin film of 1‐(3‐methylphenyl)‐1,2,3,4 tetrahydroquinoline – 6 – carboxyaldehyde‐1,1′‐diphenylhydrazone (MTCD) was used. Tris(8‐hydroxyquinoline aluminum) (Alq3) was used as electron transporting layer (ETL). For all devices with a‐C:N buffer layer a significant increase in the electroluminescence intensity was observed compared to the conventional ITO/MTCD/EL/Alq3/Al structure. The results are interpreted in terms of a highly efficient balanced electron‐hole injection into the emitting layer, because of an increase in the barrier height for the hole injection from the ITO. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Introductionmentioning

confidence: 99%

Amorphous carbon nitride thin films as buffer layer in organic LEDs

Reyes

Legnani

Cremona

et al. 2004

phys. stat. sol. (c)

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“…Surface modification on Si tip arrays is usually performed to lower operating electric field and improve emission intensity and stability. The carbon-based materials [11][12][13], nitrides [14][15], silicides [16], carbides…”

Section: Motivationmentioning

confidence: 99%

“…In the late of 1960s and early of 1970s, Spindt-type cathodes also known as Spint-type FEAs were successfully developed as shown in Figure 2 applied to modify these tip arrays including carbon-based materials [11][12][13], nitrides [14][15], silicides [16], carbides [17], and refractory metals [18], etc. The detailed review of the tip arrays will be provided in section 2.1.3.…”

Section: Tip Arraysmentioning

confidence: 99%

“…It is proposed that electrons are injected into the conduction band of the low/negative electron affinity material, from which there is a small barrier that needs to overcome for electron emission to take place. Recently, some wide band-gap materials, such as carbon nitride, boron nitride, and aluminum nitride, showed the property of NEA and were applied as effective coatings on tip arrays to improve emission behavior [13][14][15].…”

Section: Field Emission Of Si Tip Arrays With Coatingsmentioning

confidence: 99%

“…Therefore, the search for electron field emitters with low operating voltage, high and stable emission current has been a major research focus. Surface modification on Si tip arrays is currently studied to lower operating electric field and improve emission stability [11][12][13][14][15][16][17][18]. Recently, sol-gel Ba 1-x Sr x TiO 3 (BST) ferroelectric thin films on Si tip arrays have been demonstrated an enhancement in field emission by Kang [19] and Zhu [21].…”

Section: Characterization Of Field Emission Propertiesmentioning

confidence: 99%

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