2020
DOI: 10.1080/21870764.2020.1743415
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Fabrication of (a-nc) boron carbide thin films via chemical vapor deposition using ortho-carborane

Abstract: Amorphous-nanocrystalline (a-nc) boron carbide thin films were prepared by chemical vapor deposition (CVD) by using ortho-carborane as a single-source precursor for inertial confinement fusion (ICF) application. The effects of deposition temperature (T dep) and total pressure (P tot) on chemical composition, microstructure, stoichiometry and morphology of the boron carbide films were investigated. The TEM results show that the structure of the film is mainly composed of amorphous boron carbide with dispersive … Show more

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Cited by 7 publications
(5 citation statements)
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“…B 4 C is the third hardest material known after diamond and boron nitride (BN). Boron carbide is a low Z material with series of excellent properties such as high hardness (>30 GPa), high Young's modulus (>300 Gpa), low dielectric constant values ≤5, and high thermal and chemical stability [5][6][7]. As a result, boron carbide is being considered as a possible candidate material for low-k dielectric applications [8,9].…”
Section: Introductionmentioning
confidence: 99%
“…B 4 C is the third hardest material known after diamond and boron nitride (BN). Boron carbide is a low Z material with series of excellent properties such as high hardness (>30 GPa), high Young's modulus (>300 Gpa), low dielectric constant values ≤5, and high thermal and chemical stability [5][6][7]. As a result, boron carbide is being considered as a possible candidate material for low-k dielectric applications [8,9].…”
Section: Introductionmentioning
confidence: 99%
“…In particular, the boron carbide film prepared at low temperatures and pressures (T dep = 900 °C and P tot = 100 Pa) showed a comparatively flat morphology, whereas the boron carbide films prepared at low temperature and high pressure (T dep = 900 °C and P tot = 50,000 Pa) appeared as round bulges. The boron carbide films prepared at a high temperature and relatively low pressure (T dep = 1100 °C and P tot = 5000 Pa) exhibited a cauliflower-like surface, while the films prepared at high temperature and high pressure (T dep = 1200 °C and P tot = 50,000 Pa) exhibited a uniform granular surface ( Figure 5 ) [ 112 ].…”
Section: Carborane As a Boron Source For Boron-containing Materialsmentioning
confidence: 99%
“…Semiconducting boron carbide represents a new class of materials with potential applications in neutron detection because 10 B has a high cross-section (approximately 3800 barns) for neutrons at lower energies (~25 meV), based on the 10 B(n,α) 7 Li neutron capture reaction [99][100][101][102][103][104][105]. This aroused great interest in the fabrication of boron carbide films using the PECVD of ortho-carborane, and the effect of the process parameters, such as temperature and total pressure, on the composition, microstructure, morphology, and properties of the boron carbide films obtained were studied [106][107][108][109][110][111][112][113][114]. In particular, the boron carbide film prepared at low temperatures and pressures (T dep = 900 • C and P tot = 100 Pa) showed a comparatively flat morphology, whereas the boron carbide films prepared at low temperature and high pressure (T dep = 900 • C and P tot = 50,000 Pa) appeared as round bulges.…”
Section: Carborane As a Boron Source For Boron-containing Materialsmentioning
confidence: 99%
“…Therefore, acquiring the technical knowledge of B4C production, achieving its manufacturing technology from available raw materials, as well as using cost-effective fabrication methods are of special importance [8][9][10]. There are various techniques for synthesis of B4C ceramics including carbothermal reduction [11,12], synthesis from its elemental constituents [13,14], magnesiothermal reduction [15,16], chemical vapor deposition (CVD) [17][18][19], and synthesis from polymeric raw materials [20][21][22]. Among the above methods, the synthesis using constituent elements is not cost-effective due to the expensive pure raw materials required and is merely a research-based methodology for synthesis in the laboratory [23].…”
Section: Introductionmentioning
confidence: 99%