Fabrication of a p-type Cu2O thin-film via UV-irradiation of a patternable molecular-precursor film containing Cu(II) complexes

Wu, Hsiang-Jung; Tomiyama, Nobuki; Nagai, Hiroki; Sato, Mitsunobu

doi:10.1016/j.jcrysgro.2018.12.036

Cited by 12 publications

(5 citation statements)

References 24 publications

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“…This section aims to study the effect of the Cu 2 O doping density (N a ) on the cell parameters. The range of acceptor concentration (N a ) in Cu 2 O, according to experimental measurements, is from 1E14 to 1E17 cm −3 [37][38][39][40]. Simulations were run with N a values in this range and the thicknesses of Cu 2 O, TiO 2, and AZO were set to 10 μm, 70 nm, and 200 nm, respectively.…”

Section: Cu 2 O Doping Concentrationsmentioning

confidence: 99%

Numerical modeling and analysis of AZO/Cu₂O transparent solar cell with a TiO₂ buffer layer

Sliti

Touihri

Nguyen³

2023

Eng. Res. Express

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In the present work, titanium dioxide (TiO2) is sandwiched as a buffer layer between n-type aluminum-doped zinc oxide (AZO) and p-type cuprous oxide (Cu2O), increasing the efficiency of metal oxide-based solar cells. The effects of the device parameters such as thicknesses, carrier concentrations, and defect densities were investigated by numerical simulation to obtain optimal performance of Cu2O-based solar cells. Our findings reveal that by the incorporation of TiO2 thin film, the efficiency of the solar cell increases remarkably from 2.54 % to 5.02 %. The optimal thicknesses of the Cu2O and TiO2 layers are in the range of 10 μm and 0.1 μm, respectively. We obtained optimal photo-electric conversion efficiency of 10.17 % and open-circuit voltage of 1.35 V while achieving 8.90 mA/cm2 short-circuit current density and 84.12 % fill factor, using structure parameters of 0.2 μm AZO, 0.1 μm TiO2 and 10 μm Cu2O with optimal acceptor-type dopant density in Cu2O of 1E17 cm-3 and donor-type dopant density in TiO2 of 1E18 cm-3.

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Section: Cu 2 O Doping Concentrationsmentioning

confidence: 99%

Numerical modeling and analysis of AZO/Cu₂O transparent solar cell with a TiO₂ buffer layer

Sliti

Touihri

Nguyen³

2023

Eng. Res. Express

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“…Among them, the most commonly employed n‐type semiconductors are IGZO, IZO, zinc tin oxide (ZTO), as well as the binary compounds ZnO, In 2 O 3 , and GaO x . For p‐type oxides, there are far fewer studies available, with Cu 2 O being one of the exceptions …”

Section: Photochemical Conversion Of Metal‐oxide Precursors Via Deep mentioning

confidence: 99%

Recent Progress in Photonic Processing of Metal‐Oxide Transistors

Yarali

Koutsiaki

Faber

et al. 2019

Adv Funct Materials

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(1 of 37)high mobility (µ) (even in amorphous phase), wide bandgap (transparent in the visible range), and the ability to be controllably doped. Importantly, they can be grown into thin films and various nanostructures with different scalable deposition techniques, including vacuum-based methods such as physical vapor deposition (PVD) [7,8] and chemical vapor deposition (CVD) [9] as well as solution-based processes such as spray [10] and spin coating. [11] Moreover, the resulting layers can be easily patterned using standard fabrication procedures and as such can be integrated into state-of-the-art processes for (opto)electronic applications. The above-mentioned capabilities have led to a plethora of applications such as switching backplanes for displays, transparent and flexible electronics, integrated circuits (ICs), photovoltaics (PVs), organic light-emitting diodes (OLEDs), capacitors, batteries, photocatalytic devices, electrochromics and memory devices, to name but a few. [8,[12][13][14] Because of their ability to be doped, their electronic properties can be tuned from dielectrics to semiconductors and conductors. This characteristic versatility has recently been exploited to stretch the range of their applications to new technological sectors, such as plasmonics in the near infrared and midinfrared spectral ranges. [12,15] One of the driving applications of metal oxides is in thinfilm transistors (TFTs) for large area electronics such as current driven optical displays and ICs. Following the early demonstrations, [16] most effort focused on the fabrication and processing of metal oxides TFTs paying particular attention to the device performance and applications. [1,5,6,17] Especially when processed over large areas, as in the case for display applications, the complexity to precisely control the device reliability and reproducibility becomes a challenging aspect of any TFT technology. To that respect, solution-based techniques progressed rapidly due to their lower cost and higher throughput compared to vacuum-based techniques. In both cases, the metal-oxide deposition has so far been limited to high processing temperatures (>250 °C) (Figure 1a) which renders the technology incompatible with inexpensive, temperature-sensitive substrates such as polymers, the material class of choice for various high throughput manufacturing techniques such as roll-to-roll (R2R) and sheet-to-sheet (S2S)Over the past few decades, significant progress has been made in the field of photonic processing of electronic materials using a variety of light sources. Several of these technologies have now been exploited in conjunction with emerging electronic materials as alternatives to conventional hightemperature thermal annealing, offering rapid manufacturing times and compatibility with temperature-sensitive substrate materials among other potential advantages. Herein, recent advances in photonic processing paradigms of metal-oxide thin-film transistors (TFTs) are presented with particular emphasis on the use of various light sour...

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“…Cu 2 O is a prototypical p-type semiconductor with a band gap of ∼2.0 eV. , It is earth-abundant, stable, and nontoxic and is thus suited for PD applications. , Multicolor detection using a single PD allows for system integration, so broadband PDs are being developed . A p–n heterojunction that comprises two sensing materials with a different band gap is the most common structure for broadband PDs .…”

Section: Introductionmentioning

confidence: 99%

“…Cu 2 O is a prototypical p-type semiconductor with a band gap of ∼2.0 eV. 30,31 It is earth-abundant, stable, and nontoxic and is thus suited for PD applications. 32,33 Multicolor detection using a single PD allows for system integration, so broadband PDs are being developed.…”

Section: Introductionmentioning

confidence: 99%

Easily Processable Cu₂O/Si Self-Powered Photodetector Array for Image Sensing Applications

Huang

2022

ACS Appl. Electron. Mater.

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The fabrication of a conventional photodetector array (PDA) involves complex photolithography technology for pixel isolation. An easy process is essential for the mass production of PDAs. This study explores a facile method of fabricating a PDA that comprises 4 × 4 p-Cu 2 O/n-Si photodiode cells. A solutionprocessed p-type Cu 2 O film is patterned by removing the UVshielded portion by immersing it in water. The efficient separation of electron/hole pairs at the Cu 2 O/Si interface enables selfpowered operation with a responsivity of 0.3 A/W and a fast response speed (∼10 ms). The PDA has relatively good uniformity and negligible variation between pixels. It records simple characters with a satisfactory resolution and exhibits negligible degradation over 3 months. The combination of self-powering characteristics, high reliability, and easy processability indicates that this PDA can be used for image sensing applications.

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Fabrication of a p-type Cu2O thin-film via UV-irradiation of a patternable molecular-precursor film containing Cu(II) complexes

Cited by 12 publications

References 24 publications

Numerical modeling and analysis of AZO/Cu₂O transparent solar cell with a TiO₂ buffer layer

Numerical modeling and analysis of AZO/Cu₂O transparent solar cell with a TiO₂ buffer layer

Recent Progress in Photonic Processing of Metal‐Oxide Transistors

Easily Processable Cu₂O/Si Self-Powered Photodetector Array for Image Sensing Applications

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Fabrication of a p-type Cu2O thin-film via UV-irradiation of a patternable molecular-precursor film containing Cu(II) complexes

Cited by 12 publications

References 24 publications

Numerical modeling and analysis of AZO/Cu2O transparent solar cell with a TiO2 buffer layer

Numerical modeling and analysis of AZO/Cu2O transparent solar cell with a TiO2 buffer layer

Recent Progress in Photonic Processing of Metal‐Oxide Transistors

Easily Processable Cu2O/Si Self-Powered Photodetector Array for Image Sensing Applications

Contact Info

Product

Resources

About

Numerical modeling and analysis of AZO/Cu₂O transparent solar cell with a TiO₂ buffer layer

Numerical modeling and analysis of AZO/Cu₂O transparent solar cell with a TiO₂ buffer layer

Easily Processable Cu₂O/Si Self-Powered Photodetector Array for Image Sensing Applications