2013 Ieee Sensors 2013
DOI: 10.1109/icsens.2013.6688598
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Fabrication of a sandwich type three axis capacitive MEMS accelerometer

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Cited by 11 publications
(6 citation statements)
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“…A sandwich three-axis bulk-micromachined accelerometer with three individual proof masses is proposed by S. Tez and T. Akin [ 48 , 49 ]. The design consists of comb fingers proof masses for in-plane sensing and electrode plates (top and bottom) for Z-axis sensing.…”
Section: Development Of Monolithic Multi-axis Capacitive Accelerommentioning
confidence: 99%
See 1 more Smart Citation
“…A sandwich three-axis bulk-micromachined accelerometer with three individual proof masses is proposed by S. Tez and T. Akin [ 48 , 49 ]. The design consists of comb fingers proof masses for in-plane sensing and electrode plates (top and bottom) for Z-axis sensing.…”
Section: Development Of Monolithic Multi-axis Capacitive Accelerommentioning
confidence: 99%
“…The overall die size is 12 mm × 7 mm × 1 mm and the structural thickness of the device is 35 μm. The main focus of [ 48 , 49 ] is to reduce the cross-axis sensitivity and achieve low noise in a reasonable measurement range. A Double-Glass, Modified Silicon-on-Glass (DGM-SOG) process is used for fabrication.…”
Section: Development Of Monolithic Multi-axis Capacitive Accelerommentioning
confidence: 99%
“…Low-noise characteristics and low power consumption of the sensor interface circuits have become essential requirements. Capacitive microsensors are widely adopted in various applications such as humidity sensors, accelerometers, gyroscopes, biological sensors, pressure sensors, touch screen sensors, and proximity sensors [ 1 , 2 , 3 , 4 , 5 , 6 , 7 , 8 , 9 ]. With the wide use of capacitive microsensors, many research works on capacitive microsensor interface circuit techniques have been reported [ 10 , 11 , 12 , 13 , 14 , 15 , 16 , 17 , 18 , 19 , 20 , 21 , 22 ].…”
Section: Introductionmentioning
confidence: 99%
“…Compared with other bonding technologies, Au/Si eutectic bonding benefits from a low eutectic temperature (363 °C), being non-sensitive to the roughness of bonding surface and particles, having good mechanical stability, and compatibility with aluminum interconnect [ 4 ]. Therefore, it is considered the most important approach to establishing strong bonds and hermetic seals, and is widely used in the fabrication of MEMS devices, 3D interconnects, and wafer-level vacuum packaging [ 5 , 6 ]. As such, Au/Si eutectic bonding has been investigated extensively.…”
Section: Introductionmentioning
confidence: 99%