2013
DOI: 10.1021/am400612q
|View full text |Cite
|
Sign up to set email alerts
|

Fabrication of Artificially Stacked Ultrathin ZnS/MgF2 Multilayer Dielectric Optical Filters

Abstract: We report a design and fabrication strategy for creating an artificially stacked multilayered optical filters using a thermal evaporation technique. We have selectively chosen a zinc sulphide (ZnS) lattice for the high refractive index (n = 2.35) layer and a magnesium fluoride (MgF2) lattice as the low refractive index (n = 1.38) layer. Furthermore, the microstructures of the ZnS/MgF2 multilayer films are also investigated through TEM and HRTEM imaging. The fabricated filters consist of high and low refractive… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1

Citation Types

0
28
0

Year Published

2015
2015
2022
2022

Publication Types

Select...
9

Relationship

4
5

Authors

Journals

citations
Cited by 41 publications
(29 citation statements)
references
References 38 publications
0
28
0
Order By: Relevance
“…Prior to the XRD measurements, the calibration of the diffractometer was done with silicon powder (d 111 = 3.1353 Å). 38 Fig . 1a shows the XRD pattern of Ag/ZnS/Ag multilayer thin film (sample 2; details are given in Table 1) and the inset shows the photograph image of Ag/ZnS/Ag multilayer thin film.…”
Section: Resultsmentioning
confidence: 99%
“…Prior to the XRD measurements, the calibration of the diffractometer was done with silicon powder (d 111 = 3.1353 Å). 38 Fig . 1a shows the XRD pattern of Ag/ZnS/Ag multilayer thin film (sample 2; details are given in Table 1) and the inset shows the photograph image of Ag/ZnS/Ag multilayer thin film.…”
Section: Resultsmentioning
confidence: 99%
“…Prior to XRD measurements, the diffractometer was calibrated with silicon powder (d 111 ¼ 3.1353 A). 26 Raman spectra were obtained using a Renishaw InVia Raman spectrometer, UK with an excitation source of 514.5 nm. The XPS analysis was performed in an ultra-high vacuum (UHV) chamber equipped with a hemispherical electron energy analyzer (Perkin Elmer, PHI1257) using a nonmonochromatized Al Ka source (excitation energy of 1486.7 eV) with a base pressure of 4 Â 10 À10 torr at room temperature.…”
Section: Characterizationsmentioning
confidence: 99%
“…Prior to the XRD measurement, the diffractometer was calibrated using silicon powder as the reference material (d 111 = 3.1353 Å). 35 The accurate lattice parameters were also obtained through the least squares fitting method using computerbased unit cell refinement software. 36 Raman studies were carried out using an argon ion laser with a wavelength of 514.5 nm as the excitation source (Model Innova 70, Coherent).…”
Section: Characterizationmentioning
confidence: 99%