Fabrication of back-illuminated, fully depleted charge-coupled devices

Holland, S.; Dawson, Kyle; Palaio, N.; Saha, Jibesh Kanti; Roe, Natalie A.; Wang, G.

doi:10.1016/j.nima.2007.05.265

Cited by 23 publications

(17 citation statements)

References 8 publications

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“…Once the wafers are completed at LBNL, the DESI CCDs are tested in a probe station at −65 • C to screen out defective devices [9]. To date we have completed the processing of about 70 wafers, and the yield after the screening at −65 • C is about 40-45%.…”

Section: Ccd Fabrication and Packagingmentioning

confidence: 99%

Status of the CCD development for the Dark Energy Spectroscopic Instrument

et al. 2017

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A: We describe improvements in CCD performance that have been achieved on 4k × 4k, (15 µm) 2 -pixel, fully depleted CCDs for the Dark Energy Spectroscopic Instrument (DESI) [1]. With respect to our previous work on CCDs for the Dark Energy Camera and the Baryon Oscillation Spectroscopic Survey, our goals for the DESI CCD development were to improve read noise and quantum efficiency, improve the astrometric precision, and decrease pixel-size variations. We report experimental results on recently fabricated CCDs to be used in DESI.

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Section: Ccd Fabrication and Packagingmentioning

confidence: 99%

Status of the CCD development for the Dark Energy Spectroscopic Instrument

et al. 2017

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“…Very rarely was even a single individual hot pixel identified in a dark image at 133 K. More common were manufacturing defects, the occasional hot column caused by a minor clock short or back-side defect. For a more detailed account of clock shorts and back-side defects, see [15].…”

Section: Irradiation At the Lbnl 88-inch Cyclotronmentioning

confidence: 99%

Radiation Tolerance of Fully-Depleted P-Channel CCDs Designed for the SNAP Satellite

Dawson

Bebek

Emes

et al. 2008

IEEE Trans. Nucl. Sci.

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Abstract-Thick, fully depleted p-channel charge-coupled devices (CCDs) have been developed at the Lawrence Berkeley National Laboratory (LBNL). These CCDs have several advantages over conventional thin, n-channel CCDs, including enhanced quantum efficiency and reduced fringing at nearinfrared wavelengths and improved radiation tolerance. Here we report results from the irradiation of CCDs with 12.5 and 55 MeV protons at the LBNL 88-Inch Cyclotron and with 0.1 -1 MeV electrons at the LBNL 60 Co source. These studies indicate that the LBNL CCDs perform well after irradiation, even in the parameters in which significant degradation is observed in other CCDs: charge transfer efficiency, dark current, and isolated hot pixels. Modeling the radiation exposure over a sixyear mission lifetime with no annealing, we expect an increase in dark current of 20 e − /pixel/hr, and a degradation of charge transfer efficiency in the parallel direction of 3 × 10 −6 and 1 × 10 −6 in the serial direction. The dark current is observed to improve with an annealing cycle, while the parallel CTE is relatively unaffected and the serial CTE is somewhat degraded. As expected, the radiation tolerance of the p-channel LBNL CCDs is significantly improved over the conventional n-channel CCDs that are currently employed in space-based telescopes such as the Hubble Space Telescope.

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“…The CCD fabrication technology in use at LBNL has been described earlier [10], [11]. The majority of the fabrication steps are performed at a commercial foundry (DALSA Semiconductor), with the steps needed to produce back-illuminated devices done at LBNL.…”

Section: Ccd Development At Lawrence Berkeley National Laboratorymentioning

confidence: 99%

“…Since the large defects from the ISDP gettering process affect both the yield and the long-term reliability of the CCDs, it is important to minimize their occurrence and develop screening tests for their presence [11]. Particles of the type shown in Fig.…”

Section: Fabricationmentioning

confidence: 99%

“…Wafer-level probing at -45 o C is used as the first screening test of the finished CCDs, and the automated software analysis program can detect and report defects including blocked columns, backside defects, and pixels and columns with high dark current [11]. Table I shows the number of blocked columns seen for large-format CCDs that were fabricated on re-polished substrates.…”

Section: Fabricationmentioning

confidence: 99%

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Technology development for 4k × 4k, back- illuminated, fully depleted scientific CCD imagers

Holland

Bebek

Daniels

et al. 2007

2007 IEEE Nuclear Science Symposium Conference Record

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We have developed scientific charge-coupled devices (CCDs) that are fabricated on high-resistivity, n-type silicon substrates, and have demonstrated fully depleted operation for substrate thicknesses of 200-675 μm with formats as large as 2048 × 4096 (15 μm pixels) and 3512 × 3512 (10.5 μm pixels). The main application area for these devices is space and ground-based astronomy, and the CCDs are operated at cryogenic temperatures with slow-scan readout for good performance in terms of dark current and noise. In this work we describe the technology development efforts needed to realize a 4k × 4k (15 μm pixel) CCD with a die area of (64 mm) 2 . In particular, we describe improved gettering techniques for low dark current and high charge transfer efficiency that have been developed in order to improve fabrication yields for these very large format CCDs.

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Fabrication of back-illuminated, fully depleted charge-coupled devices

Cited by 23 publications

References 8 publications

Status of the CCD development for the Dark Energy Spectroscopic Instrument

Status of the CCD development for the Dark Energy Spectroscopic Instrument

Radiation Tolerance of Fully-Depleted P-Channel CCDs Designed for the SNAP Satellite

Technology development for 4k × 4k, back- illuminated, fully depleted scientific CCD imagers

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Fabrication of back-illuminated, fully depleted charge-coupled devices

Cited by 23 publications

References 8 publications

Status of the CCD development for the Dark Energy Spectroscopic Instrument

Status of the CCD development for the Dark Energy Spectroscopic Instrument

Radiation Tolerance of Fully-Depleted P-Channel CCDs Designed for the SNAP Satellite

Technology development for 4k &#x00D7; 4k, back- illuminated, fully depleted scientific CCD imagers

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Technology development for 4k × 4k, back- illuminated, fully depleted scientific CCD imagers