Fabrication of Carbon Nanotube Field Effect Transistors by Self-Assembly

Valentín, Emmanuel; Auvray, Stéphane; Filoramo, Arianna; Ribayrol, Aline; Goffman, M. F.; Goethals, Julie; Capes, Laurence; Bourgoin, Jean‐Philippe; Patillon, J. N.

doi:10.1007/978-1-4020-2093-3_6

Cited by 4 publications

(4 citation statements)

References 14 publications

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“…This thin oxide layer serves as the back-gate dielectric to maximize the gate efficiency. We then prepared the CNTFETs using a selective placement technique of carbon nanotubes as reported elsewhere [36][37][38][39]. Briefly, regions for the selective placement of CNTs on SiO 2 are defined by electron-beam lithography on a poly(methyl methacrylate) (PMMA) layer.…”

Section: Methodsmentioning

confidence: 99%

Optoelectronic Switch and Memory Devices Based on Polymer‐Functionalized Carbon Nanotube Transistors

et al. 2006

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Section: Methodsmentioning

confidence: 99%

Optoelectronic Switch and Memory Devices Based on Polymer‐Functionalized Carbon Nanotube Transistors

et al. 2006

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“…The SWNTs are then connected in a transistor geometry (Cr/Au source and drain electrodes, spaced by 100 to 500 nm) using the heavily doped and oxidized silicon substrate (200 nm of SiO 2 ) as back-gate. Elaborating on pioneering works using an electrostatic interaction between the SWNTs and the SAM, − we recently showed that a high yield of highly selective deposition of individual SWNTs in predefined areas of the substrate, and thus a high yield of CNTFETs fabrication, was possible using simultaneously a SWNT organic solvent dispersion and deposition on an optimized SAM. − The SWNT raw material used in the present work was produced by a laser ablation technique at Dresden University and purified by an optimized soft acidic treatment . The purified SWNTs were dispersed by moderate sonication in N -methyl pyrrolidone (NMP), which proves the solvent of choice for a high yield of selective deposition onto the APTS patterns.…”

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confidence: 99%

Chemical Optimization of Self-Assembled Carbon Nanotube Transistors

et al. 2005

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We present the improvement of carbon nanotube field effects transistors (CNTFETs) performances by chemical tuning of the nanotube/substrate and nanotube/electrode interfaces. Our work is based on a method of selective placement of individual single walled carbon nanotubes (SWNTs) by patterned aminosilane monolayer and its use for the fabrication of self-assembled nanotube transistors. This method brings a relevant solution to the problem of systematic connection of self-organized nanotubes. The aminosilane monolayer reactivity can be used to improve carrier injection and doping level of the SWNT. We show that the Schottky barrier height at the nanotube/metal interface can be diminished in a continuous fashion down to an almost ohmic contact through these chemical treatments. Moreover, sensitivity to 20 ppb of triethylamine is demonstrated for self-assembled CNTFETs, thus opening new prospects for gas sensors taking advantages of the chemical functionality of the aminosilane used for assembling the CNTFETs.

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“…This kind of studies started with the pioneering works of Liu et al [42], Muster et al [43] and Choi et al [6]. The combination of adapted organic solvent and well organized monolayers allowed us to control both the deposition density and selectivity [7][8][9]. The process can be summarized as follows: electron-beam lithography is performed on PMMA deposited on the SiO 2 surface of a Si substrate.…”

Section: Selective Placement Of Nanotubesmentioning

confidence: 99%

“…In this article, we present our strategy to build and study electronic devices starting from commercial nanotubes and going through different steps of chemical purification [3,4], solubilization, functionalization [4,5] and assembly [6][7][8][9][10][11][12]. We think that these steps are the key to the development of innovative electronic functions.…”

Section: Introductionmentioning

confidence: 99%

Carbon nanotube chemistry and assembly for electronic devices

Derycke

Auvray

Borghetti

et al. 2009

Comptes Rendus. Physique

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Carbon nanotubes (CNTs) have exceptional physical properties that make them one of the most promising building blocks for future nanotechnologies. They may in particular play an important role in the development of innovative electronic devices in the fields of flexible electronics, ultra-high sensitivity sensors, high frequency electronics, opto-electronics, energy sources and nanoelectromechanical systems (NEMS). Proofs of concept of several high performance devices already exist, usually at the single device level, but there remain many serious scientific issues to be solved before the viability of such routes can be evaluated. In particular, the main concern regards the controlled synthesis and positioning of nanotubes. In our opinion, truly innovative use of these nano-objects will come from: (i) the combination of some of their complementary physical properties, such as combining their electrical and mechanical properties; (ii) the combination of their properties with additional benefits coming from other molecules grafted on the nanotubes (this route being particularly relevant for gas-and bio-sensors, opto-electronic devices and energy sources); and (iii) the use of chemically-or bio-directed self-assembly processes to allow the efficient combination of several devices into functional arrays or circuits. In this article, we review our recent results concerning nanotube chemistry and assembly and their use to develop electronic devices. In particular, we present carbon nanotube field effect transistors and their chemical optimization, high frequency nanotube transistors, nanotube-based opto-electronic devices with memory capabilities and nanotube-based nano-electromechanical systems (NEMS). The impact of chemical functionalization on the electronic properties of CNTs is analyzed on the basis of theoretical calculations.

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Fabrication of Carbon Nanotube Field Effect Transistors by Self-Assembly

Cited by 4 publications

References 14 publications

Optoelectronic Switch and Memory Devices Based on Polymer‐Functionalized Carbon Nanotube Transistors

Optoelectronic Switch and Memory Devices Based on Polymer‐Functionalized Carbon Nanotube Transistors

Chemical Optimization of Self-Assembled Carbon Nanotube Transistors

Carbon nanotube chemistry and assembly for electronic devices

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