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We report the first combined photoluminescence and pump-probe measurements on single wall carbon nanotubes isolated in micelles. The bandgap photoluminescence is observed at room temperature and is concomittent with a drastic change in the photocreated carrier dynamics as compared to the one observed in usual macroscopic samples. Probing the fundamental bandgap leads to a non-exponential dynamics which is related to a lifetime distribution within the macroscopic nanotube population. Probing the second van Hove transition leads to a strong increase of the excitation lifetime which demonstrates that some non-radiative relaxation channels are quenched for isolated nanotubes. These observations constitute an important step in the understanding of the existence of photoluminescence in isolated nanotubes.

We describe the realization of high quality self-assembled single wall carbon nanotube field effect transistors (CNTFET). A method using self-assembled monolayers (SAMs) is used to obtain high yield selective deposition placement of single wall carbon nanotubes (SWNTs) on predefined regions of a substrate. This is achieved with individual or small bundles of SWNTs and with high densities suitable for fabrication of integrated devices. We show that such positioned SWNTs can be electrically contacted to realize high performance transistors, which very well compare with state-of-the-art CNTFETs. We therefore validate the self-assembly approach to reliably fabricate efficient carbon nanotube based devices.