Fabrication of Carrier-Doped Si Nanoarchitecture for Thermoelectric Material by Ultrathin SiO2 Film Technique

Ueda, Tomohiro; Sakane, Shunya; Ishibe, Takafumi; Watanabe, Kentaro; Takeuchi, Shinichi; Sakai, Akira; Nakamura, Yoshiaki

doi:10.1007/s11664-015-4294-3

Cited by 14 publications

(8 citation statements)

References 36 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Also, previous study showed that Ga atoms decreased the thermal conductivity of solid-phase epitaxy Si layer by acting as phonon scatters. 31 By contrast; in our study the Al atoms played a totally different role in a-Si. Al atoms increased the thermal conductivity of a-Si thin lms by increasing the number of phonons with long MFPs.…”

Section: Resultscontrasting

confidence: 73%

Modification of thermal conductivity and thermal boundary resistance of amorphous Si thin films by Al doping

Zhan

Goto

et al. 2017

RSC Adv.

View full text Add to dashboard Cite

show abstract

Section: Resultscontrasting

confidence: 73%

Modification of thermal conductivity and thermal boundary resistance of amorphous Si thin films by Al doping

Zhan

Goto

et al. 2017

RSC Adv.

View full text Add to dashboard Cite

show abstract

“…Electrical resistances of doped stacked structures were confirmed to be much larger than that of Au film electrodes. The details of 2ω method were described in our previous papers 17 19 27 .…”

Section: Methodsmentioning

confidence: 99%

Independent control of electrical and heat conduction by nanostructure designing for Si-based thermoelectric materials

Yamasaka

Watanabe

Sakane

et al. 2016

Sci Rep

Self Cite

View full text Add to dashboard Cite

The high electrical and drastically-low thermal conductivities, a vital goal for high performance thermoelectric (TE) materials, are achieved in Si-based nanoarchitecture composed of Si channel layers and epitaxial Ge nanodots (NDs) with ultrahigh areal density (~1012 cm−2). In this nanoarchitecture, the ultrasmall NDs and Si channel layers play roles of phonon scattering sources and electrical conduction channels, respectively. Electron conductivity in n-type nanoacrhitecture shows high values comparable to those of epitaxial Si films despite the existence of epitaxial NDs. This is because Ge NDs mainly scattered not electrons but phonons selectively, which could be attributed to the small conduction band offset at the epitaxially-grown Si/Ge interface and high transmission probability through stacking faults. These results demonstrate an independent control of thermal and electrical conduction for phonon-glass electron-crystal TE materials by nanostructure designing and the energetic and structural interface control.

show abstract

“…Clean Si(111) surfaces were obtained by flashing at 1250 °C after outgassing at 500 °C for about 6 h. These clean surfaces were oxidized at 600 °C for 10 min at an oxygen pressure of 2 × 10 −4 Pa to form 0.3-nm-thick SiO 2 films (ultrathin SiO 2 films). 26,32,33) Twenty five monolayers (MLs) of Ge were deposited onto the ultrathin SiO 2 films at 600 °C to form Ge nuclei of ∼20 nm in lateral size at an areal density of 1 × 10 11 cm −2 . These experimental details were reported elsewhere.…”

Section: Methodsmentioning

confidence: 99%

Effect of Fe coating of nucleation sites on epitaxial growth of Fe oxide nanocrystals on Si substrates

Ishibe¹,

Watanabe²,

Nakamura³

2016

Jpn. J. Appl. Phys.

Self Cite

View full text Add to dashboard Cite

We studied the effect of Fe coating on the epitaxial growth of Fe3O4 nanocrystals (NCs) over Fe-coated Ge epitaxial nuclei on Si(111). To completely cover Ge nuclei with Fe, some amount of Fe (>8 monolayers) must be deposited. Such covering is a key to epitaxial growth because an Fe coating layer prevents the oxidation of Ge surfaces during Fe3O4 formation, resulting in the epitaxial growth of Fe3O4 on them. This study demonstrates that an appropriate Fe coating of nucleation sites leads to the epitaxial growth of Fe3O4 NCs on Si substrates, indicating the realization of environmentally friendly and low-cost Fe3O4 NCs as the resistance random access memory material.

show abstract

Fabrication of Carrier-Doped Si Nanoarchitecture for Thermoelectric Material by Ultrathin SiO2 Film Technique

Cited by 14 publications

References 36 publications

Modification of thermal conductivity and thermal boundary resistance of amorphous Si thin films by Al doping

Modification of thermal conductivity and thermal boundary resistance of amorphous Si thin films by Al doping

Independent control of electrical and heat conduction by nanostructure designing for Si-based thermoelectric materials

Effect of Fe coating of nucleation sites on epitaxial growth of Fe oxide nanocrystals on Si substrates

Contact Info

Product

Resources

About