Independent control of electrical and heat conduction by nanostructure designing for Si-based thermoelectric materials

Yamasaka, Shuto; Watanabe, Kentaro; Sakane, Shunya; Takeuchi, Shinichi; Sakai, Akira; Sawano, Kentarou; Nakamura, Yoshiaki

doi:10.1038/srep22838

Cited by 46 publications

(35 citation statements)

References 46 publications

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“…The Si layer and the Ge NDs should serve as the electrical conduction layer and phonon scattering bodies, respectively. Because the separate structures have separate roles, we expected independent control of the electrical and thermal conductivities [ 31 ]. The density of the ND interfaces and their size were correlated within the structure of the connected Si NDs.…”

Section: Strategy For Thermal and Electrical Control Using Nanostructmentioning

confidence: 99%

Nanostructure design for drastic reduction of thermal conductivity while preserving high electrical conductivity

Nakamura

2018

Science and Technology of Advanced Materials

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The design and fabrication of nanostructured materials to control both thermal and electrical properties are demonstrated for high-performance thermoelectric conversion. We have focused on silicon (Si) because it is an environmentally friendly and ubiquitous element. High bulk thermal conductivity of Si limits its potential as a thermoelectric material. The thermal conductivity of Si has been reduced by introducing grains, or wires, yet a further reduction is required while retaining a high electrical conductivity. We have designed two different nanostructures for this purpose. One structure is connected Si nanodots (NDs) with the same crystal orientation. The phonons scattering at the interfaces of these NDs occurred and it depended on the ND size. As a result of phonon scattering, the thermal conductivity of this nanostructured material was below/close to the amorphous limit. The other structure is Si films containing epitaxially grown Ge NDs. The Si layer imparted high electrical conductivity, while the Ge NDs served as phonon scattering bodies reducing thermal conductivity drastically. This work gives a methodology for the independent control of electron and phonon transport using nanostructured materials. This can bring the realization of thermoelectric Si-based materials that are compatible with large scale integrated circuit processing technologies.

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Section: Strategy For Thermal and Electrical Control Using Nanostructmentioning

confidence: 99%

Nanostructure design for drastic reduction of thermal conductivity while preserving high electrical conductivity

Nakamura

2018

Science and Technology of Advanced Materials

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“…In this structure, epitaxial Ge NDs worked as phonon scattering centers and epitaxial Si layers worked as electric conduction layers. This result indicated the possibility of the independent control of the thermal and electric conductivities [2,3]. However, S was not controlled in this nanostructure.…”

Section: Introductionmentioning

confidence: 78%

“…To cite this article: S. Sakane CREST-JST, Japan, 3 Tohoku University, Japan, 4 Shiga university of Medical Science, Japan *E-mail: nakamura@ee.es.osaka-u.ac.jp Abstract. Nanostructures are expected to enhance thermoelectric properties of Si-based materials.…”

Section: Formation Of Various Epitaxial Nanodots In Si Films For Thermentioning

confidence: 99%

Formation of various epitaxial nanodots in Si films for thermoelectric materials

Sakane

Watanabe²,

Fujita³

et al. 2018

J. Phys.: Conf. Ser.

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Abstract. Nanostructures are expected to enhance thermoelectric properties of Si-based materials. For enhancement, the simultaneous achievement of low  and high  is required. In our previous study, we have demonstrated drastic reduction of  in Si by introducing epitaxial connected Si NDs resulting in the sm allest  in Si. We have also reported that Si films containing Ge NDs exhibited the bulk -like  and the drastic  reduction compared with that of bulk Si. However, S was not controlled in this nanostructure. In general, introduction of interfaces or high S materials can increase S of the total film. In addition to control of  and , S can be controlled by tuning the material and size of NDs. In this work, we developed the formation method of the various material and size of introduced NDs.

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“…In fact, thermal conductivity can be significantly reduced owing to nanostructured materials. 37 Recently, the interest in thermoelectric devices has gained momentum with the advances in nanostructural engineering, which led to overall efforts to demonstrate high-efficiency materials. At the same time, complex bulk materials (such as skutterudites, clathrates, and Zintl phases) have been explored, and it was found that highefficiencies could be obtained.…”

Section: Thermoelectric Device: From Bulk To Nanomentioning

confidence: 99%

Review—Micro and Nano-Engineering Enabled New Generation of Thermoelectric Generator Devices and Applications

Rojas

Singh

Inayat³

et al. 2017

ECS J. Solid State Sci. Technol.

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As we are advancing our world to smart living, a critical challenge is increasingly pressing -increased energy demand. While we need mega power supplies for running data centers and other emerging applications, we also need instant small-scale power supply for trillions of electronics that we are using and will use in the age of Internet of Things (IoT) and Internet of Everything (IoE). Such power supplies must meet some parallel demands: sufficient energy supply in reliable, safe and affordable manner. In that regard, thermoelectric generators emerge as important renewable energy source with great potential to take advantage of the widely-abundant and normally-wasted thermal energy. Thanks to the advancements of nano-engineered materials, thermoelectric generators' (TEG) performance and feasibility are gradually improving. However, still innovative engineering solutions are scarce to sufficiently take the TEG performance and functionalities beyond the status-quo. Opportunities exist to integrate them with emerging fields and technologies such as wearable electronics, bio-integrated systems, cybernetics and others. This review will mainly focus on unorthodox but effective engineering solutions to notch up the overall performance of TEGs and broadening their application base. First, nanotechnology's influence in TEGs' development will be introduced, followed by a discussion on how the introduction of mechanically reconfigurable devices can shape up the emerging spectrum of novel TEG technologies. The technology-driven age we are currently in, have brought great advantages to establish a more comfortable and smarter living and it is leading the way for an even faster-growing development in all areas of science and engineering, but at the same time it brings an incredibly fast growing demand for energy. Current and future energy consumption mandate the need for alternative energy sources, with reduced environmental impact. Readily available solar and wind energies have lead the way as alternative energy sources to environmentally challenging fossil fuels.1 Moreover, thanks to more recent developments in thermoelectric (TE) materials and devices, the possibility of making a better use of the widely abundant and normally wasted thermal energy, has becoming a popular and feasible alternative.2 More importantly, thermal waste has become a very important and environmentallyfriendly source of otherwise wasted energy.3,4 There has been already an important set of studies covering the mechanism involved during the conversion from thermal to electric energy. [5][6][7][8] Such studies have been the starting point to develop and optimize novel TE materials with the resourceful aid of uprising nanotechnologies. 9,10 In this review, we will first shortly introduce some important basic concepts and relations about thermoelectrics, as well as some of the current efforts to use nanotechnologies and nano-materials to improve performance and viability. Next, we will focus on identifying innovative devices, novel engineering approach...

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Independent control of electrical and heat conduction by nanostructure designing for Si-based thermoelectric materials

Cited by 46 publications

References 46 publications

Nanostructure design for drastic reduction of thermal conductivity while preserving high electrical conductivity

Nanostructure design for drastic reduction of thermal conductivity while preserving high electrical conductivity

Formation of various epitaxial nanodots in Si films for thermoelectric materials

Review—Micro and Nano-Engineering Enabled New Generation of Thermoelectric Generator Devices and Applications

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