Fabrication of Cd₃As₂nanowires by direct vapor–solid growth, and their infrared absorption properties

Abstract

In this work the authors introduce and provide details of the synthesis and spectral characterization of single-crystal nanowires in less common, high performance, group II-V semiconductors such as Cd(3)As(2). The growth mechanism critically deviates from a known vapor-liquid-solid one by being completely non-catalytic and involving only two states: vapor and solid. The resultant nanowires range from ∼50 to 200 nm in diameter and reach lengths up to tens of micrometers, with their fast growth direction being normal to the (112) crystal planes. According to infrared (IR) optical absorption measurements, the nanowires have several IR active direct type light absorption transitions at 0.11, 0.28 and 0.54 eV, suggestive of their possible utility in low cost optoelectronic devices and photodetectors operating in the long wavelength range of the electromagnetic spectrum.

One-Dimensional Nanostructures and Devices of II–V Group Semiconductors

“…Till now, Cd 3 P 2 , Zn 3 P 2 , and Cd 3 As 2 among the II–V group semiconductors were found to be able to form into the nanowire structures. Omari et al [ 53 ] reported the synthesis of single-crystalline Cd 3 As 2 nanowires by thermal evaporation of Cd 3 As 2 powders at 750 °C. Figure 3 a is a SEM image of the Cd 3 As 2 nanowires.…”

Structural properties and growth mechanism of Cd3As2 nanowires

“…Omari et al reported the non-catalytic vapor-solid growth of Cd 3 As 2 nanowires from a Cd 3 As 2 film, ruling out any effect of Cd on the growth. 8 For Zn 3 As 2 , on the other hand, it is known that Zn particles act as self-catalysts in the vapor-liquid-solid growth of nanowires. 9 In this letter, we present the growth and structural analysis of Cd 3 As 2 micro-and nanowires by X-ray diffraction (XRD), Raman spectroscopy, atomic force microscopy (AFM), scanning electron microscopy (SEM), and transmission electron microscopy (TEM) with energy dispersive X-ray spectroscopy (EDS).…”

Large-Scale Synthesis of Mullite Nanowires by Molten Salt Method

“…The above analysis and characterization results indicate that single crystal mullite nanowires have been produced in large quantities. Since no catalyst, gaseous precursors, template, and surfactants are used, common mechanisms for nanowires such as vapor-liquid-solid growth, 28 vaporsolid growth 29 and template confined growth 30 cannot be employed to explain the formation process of these mullite nanowires. In our experiment, if we directly mix Al 2 O 3 s , SiO 2 s and Na 2 SO 4 s with the same molar ratio and heat the mixture to 1000 C for 3 h, mullite nanowires cannot be synthesized.…”