2017
DOI: 10.1016/j.opelre.2017.04.005
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Fabrication of CdMgTe/Cd(Mn)Te nanostructures with the application of high-resolution electron-beam lithography

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Cited by 5 publications
(2 citation statements)
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“…The gratings were patterned with an electron beam lithography (EBL). In the case of II-VI materials, low-temperature EBL procedures are preferable [32]; therefore we used CSAR 62 positive-tone resist, which requires lower backing temperatures as compared to PMMA. In our case, samples were briefly baked (during 5 min) at 155 • C on a hotplate.…”
Section: Etchingmentioning
confidence: 99%
“…The gratings were patterned with an electron beam lithography (EBL). In the case of II-VI materials, low-temperature EBL procedures are preferable [32]; therefore we used CSAR 62 positive-tone resist, which requires lower backing temperatures as compared to PMMA. In our case, samples were briefly baked (during 5 min) at 155 • C on a hotplate.…”
Section: Etchingmentioning
confidence: 99%
“…The gratings were patterned with electron beam lithography. We applied a low-temperature procedure, which has been shown to be preferable in the case of II-VI materials [22]. For this reason, instead of using a standard PMMA resist, we applied a positive-tone resist CSAR 62, for which the baking temperature is lower than that for PMMA.…”
Section: Samples and Experimentsmentioning
confidence: 99%