2006
DOI: 10.1016/j.tsf.2006.01.064
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Fabrication of densely packed, well-ordered, high-aspect-ratio silicon nanopillars over large areas using block copolymer lithography

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Cited by 70 publications
(46 citation statements)
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“…[4] This has made the fabrication of efficient devices incorporating new materials difficult because each new material leads to a new morphology with its own characteristic length scale. The ordered bulk heterojunction architecture is intended to alleviate these issues by using a pre-patterned nanostructured scaffold [5][6][7] that has been engineered to have both straight pathways to the electrodes to ensure efficient carrier collection, and controlled domain size to ensure efficient exciton harvesting. Recently, chain alignment has been shown to be promoted for regioregular poly(3-hexyl thiophene) (RR-P3HT) in straight nanopores of anodic alumina leading to a 20-fold increase in hole-mobility in these structures.…”
mentioning
confidence: 99%
“…[4] This has made the fabrication of efficient devices incorporating new materials difficult because each new material leads to a new morphology with its own characteristic length scale. The ordered bulk heterojunction architecture is intended to alleviate these issues by using a pre-patterned nanostructured scaffold [5][6][7] that has been engineered to have both straight pathways to the electrodes to ensure efficient carrier collection, and controlled domain size to ensure efficient exciton harvesting. Recently, chain alignment has been shown to be promoted for regioregular poly(3-hexyl thiophene) (RR-P3HT) in straight nanopores of anodic alumina leading to a 20-fold increase in hole-mobility in these structures.…”
mentioning
confidence: 99%
“…The work extended the use of BCP templates to act as both negative and positive templates. Succeeding publications on PMMA based etching and lift-off methods have demonstrated graphoepitaxially aligned magnetic Co nanodots using a dry lift-off procedure, [ 58 ] fabrication REVIEW of high-aspect ratio (1:10) Si nanopillars using sputtered Cr, [ 59 ] high temperature resistant Au nanoparticles, [ 60 ] ultra-small ferromagnetic (Co) nanorings, [ 61 ] Ag nanowires (also fabricated via electrochemical etching), [ 62 ] selective masked deposition of Fe catalyst particles for carbon nanotube growth, [ 63 ] Au and Al nanowire arrays guided by soft graphoepitaxy, [ 64,65 ] Al 2 O 3 dot nanopatterning on Cu substrates, [ 66 ] Si nanocrystals, [ 67 ] and Ge nanowire fabrication. [ 68 ] Whilst generally not widely employed, one should note that electrodeposition methods have also been used to deposit inorganic material in porous PS-b -PMMA fi lms as demonstrated in excellent work by Thurn-Albrecht et al [ 69 ] In relation to evaporation methods, a report in 2007 attempted to selectively decorate evaporated Ag on electron-beam lithographically exposed PS-b -PMMA BCPs.…”
Section: Evaporation and Sputtering Of Metals On Block Copolymer Tempmentioning
confidence: 99%
“…e-h) Reproduced with permission. [ 118 ] [53,55,60,80,97] Co posts, [58] Co nanorings, [61] Fe posts, [63] Cr posts [59,73] aligned Al and Au nanowires, [64] Ge nanowires, [68] Al 2 O 3 dots, [66] Ti/Pt dots [85] On-chip etch mask, [44] ferromagnetic nanorings, [61] carbon nanotube growth, [63] metal nanodot memory device, [73] triboelectric generator, [62] resistive switching nanodevice, [85] plasmonic, [97] Atomic layer deposition Al 2 O 3 line and hole spacer, [94] Al 2 O 3 wires and posts [95,96] On-chip etch mask [96] Sequential infi ltration synthesis Al 2 O 3 posts, [111 , 116-120 , 122] Al 2 O 3 wires, [111][112][113][114][115][116] TiO 2 wires, [111] SiO 2 posts, [112] SiO 2 wires, [112] W wires, [112] ZnO posts, [116] ZnO wires [112,116] On-chip etch mask, [113-115 , 117,118] SIS procedure for PS block selectivity, [116] superhydrophobicity, [117,118] anti-refl ec...…”
Section: Reviewmentioning
confidence: 99%
“…However, the shapes and the sizes of the nanoparticles created by these techniques are not as well defined as the features created by using traditional lithography, and the placing of the nanoparticles is also inexact. At the same time, the self-assembly can be very time consuming [17] and long-ranged order is still not achieved [18].…”
Section: Introductionmentioning
confidence: 99%