Fabrication of diamond lateral p–n junction diodes on (111) substrates

Abstract

Diamond lateral p–n junctions were fabricated on (111) substrates by selective growth of n‐type diamond around a p‐type layer. We investigated the effects of both the step‐flow growth direction of n‐type diamond and the crystal face of the p‐type sidewalls on the structure and electrical properties of the lateral p–n junctions. The direction of the step‐flow growth clearly influenced the morphologies of the p–n junctions. We also found that the crystal faces of the p‐type sidewalls had an effect on the quality of the lateral p–n junctions. The two facing p–n junctions obtained in this study becomes an n–p–n structure, which could be a key structure for metal‐oxide‐semiconductor field‐effect transistors with an inversion channel.

Truly Transparent p-Type γ-CuI Thin Films with High Hole Mobility

“…Since n-type doping of Cu 3 N can be achieved by adjusting deposition conditions , or via impurity doping, our method may lead to the fabrication of a CuI–Cu 3 N lateral p–n junction. Various intriguing properties of lateral p–n junctions have been reported in WSe 2 –MoS 2 systems, graphene, and diamond . Thus, our method may lead to a new device composed of a CuI–Cu 3 N lateral p–n junction, which may exhibit interesting properties.…”

“…Various intriguing properties of lateral p−n junctions have been reported in WSe 2 −MoS 2 systems, 58 graphene, 59 and diamond. 60 Thus, our method may lead to a new device composed of a CuI−Cu 3 N lateral p−n junction, which may exhibit interesting properties.…”

High‐Pressure High‐Temperature Single‐Crystal Diamond Type IIa Characterization for Particle Detectors

“…in diameter, whereas single‐crystal diamonds (SCDs) can reach—up to 10 × 10 mm. Moreover, unlike HPHT, this method allows sequential and lateral layers growth of various types using different doping concentrations, which is especially important in semiconductor technology …”