Fabrication of epitaxial nanostructured ferroelectrics and investigation of their domain structures

Han, Haewook; Lee, K.; Lee, Woongsup; Alexe, Marin; Hesse, D.; Baik, Sunggi

doi:10.1007/s10853-009-3528-2

Cited by 20 publications

(18 citation statements)

References 66 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This realization has led to patterning methods to create PZT islands [28][29][30] or bilayers [ 31 ] to partially release ferroelastic fi lms from the substrate's mechanical constraint. Although such methods increase electric-fi eld-driven 90 ° domain wall mobility relative to that of continuous, single-layer PZT fi lms, they are insuffi cient for probing the fundamental mobility of ferroelastic domains in thin fi lms and its relation to nanoscale materials features such as point defects, grain boundaries, and fi lm surface/interface features.…”

Section: Introductionmentioning

confidence: 99%

Mobile Ferroelastic Domain Walls in Nanocrystalline PZT Films: the Direct Piezoelectric Effect

Zednik

Anbusathaiah

Oliver

et al. 2011

Adv Funct Materials

View full text Add to dashboard Cite

Ferroelastic (90°) domain wall motion occurs readily in bulk samples of displacive ferroelectrics such as Pb(Zr,Ti)O3 (PZT), dictating critical piezoelectric, dielectric, and polarization switching properties. Many prior studies have used converse piezoelectric measurements to probe the dynamics of ferroelastic domains in thin films; however, such experiments are strongly influenced by the mechanical clamping effect of the substrate, which inhibits electric field‐induced 90° domain wall motion. Nevertheless, these observations raise a tantalizing question: Does the application of mechanical stress, rather than electric field, result in an entirely different response in thin films? Here we report biaxial stress‐driven crystallographic reorientation of (100)/(001) textured, 70 nm thick Pb(Zr0.25Ti0.75)O3 films via 90° domain wall motion, measured in situ by both x‐ray diffraction and piezoforce microscopy. Visual evidence of nanoscale mechanisms that underlie the direct piezoelectric effect is shown. Mobile 90° domain walls effect complete orientation switching in the grains in which they operate, without apparent wall pinning, indicating that bulk‐like ferroelastic behavior can extend to nanocrystalline films in the absence of substrate clamping.

show abstract

Section: Introductionmentioning

confidence: 99%

Mobile Ferroelastic Domain Walls in Nanocrystalline PZT Films: the Direct Piezoelectric Effect

Zednik

Anbusathaiah

Oliver

et al. 2011

Adv Funct Materials

View full text Add to dashboard Cite

show abstract

“…There have been many efforts to fabricate and analyze individually addressable nanoscale ferroelectric capacitors. [4][5][6][7][8][9][10][11][12] Several different fabrication methods such as chemical solution deposition, focused ion-beam ͑FIB͒, and e-beam lithography have been used for ferroelectric nanostructure fabrication. [6][7][8][9][10][11][12][13][14][15] FIB has been almost exclusively used to fabricate ferroelectric capacitors.…”

Section: Introductionmentioning

confidence: 99%

“…Recently we reported an anodic aluminum oxide ͑AAO͒-based fabrication method which can be easily applied to fabricate nanoscale ferroelectric capacitors and structures without any significant detrimental effects. 6,8 This AAO-based fabrication method is a unique approach for the high quality fabrication of nanostructures and the subsequent solvent-free lift-off process is suitable for even very sensitive materials. 6 Therefore, this approach may give us reliable access to smaller capacitors than conventional approaches such as FIB or e-beam lithography.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Individual switching of film-based nanoscale epitaxial ferroelectric capacitors

Kim¹,

Han²,

Rodriguez³

et al. 2010

Journal of Applied Physics

View full text Add to dashboard Cite

We have investigated the individual switching of nanoscale capacitors by piezoresponse force microscopy. Nanoscale epitaxial ferroelectric capacitors with terabyte per inch square equivalent density were fabricated by the deposition of top electrodes onto a pulsed laser deposited lead zirconate titanate thin film by electron beam evaporation through ultrathin anodic aluminum oxide membrane stencil masks. Using bias pulses, the nanoscale capacitors were uniformly switched and proved to be individually addressable. These film-based nanoscale capacitors might be a feasible alternative for high-density mass storage memory applications with near terabyte per inch square density due to the absence of any cross-talk effects.

show abstract

“…A general theoretical approach concerning the properties of ferroelectrics in the nanoscale is framed by Eliseev and Morovoska [11]. The synthesis of ferroelectric nanocubes and epitaxial nanostructures are discussed by Wada et al [12] and Han et al [13]. Piezoresponse Force Microscopy (PFM) has been proven to be an invaluable tool to understand the properties of ferroelectrics in the nanoscale.…”

mentioning

confidence: 99%

Recent developments in ferroelectric nanostructures and multilayers

2009

View full text Add to dashboard Cite

The property of ferroelectricity was first reported in 1921 in Rochelle salt (sodium potassium tartrate). Once considered a rare phenomenon limited to a comparatively small class of crystals, the discovery of ferroelectricity in the binary oxide compound barium titanate (BaTiO 3 ) in the mid-1940s paved the way for rapid advances in the search of new materials. Since that time, a great many other ferroelectric compounds and solid solutions have been found and there has been broad interest in ferroelectric materials that has continued essentially uninterrupted until the present time. Ferroelectric materials remain subjects of intensive investigation today for three principal reasons. First, the unique dielectric, pyroelectric, piezoelectric, and electro-optic properties exhibited by ferroelectric crystals, ceramics, composites, and thin films can be exploited in great many devices of commercial importance. Second, apart from their many technological applications, ferroelectric materials as a class exhibit a great diversity of phase transitions that make them ideal objects for scientific investigations into the origins and mechanisms of a wide range of structural transformation phenomena. Finally, advances in thin-film deposition and nanoscale fabrication techniques made over the past two decades have created new possibilities for the integration of these materials into the ever expanding array of microelectronic devices.Ferroelectrics form a sub-group of functional (or smart) materials whose physical properties are sensitive to changes in external conditions such as temperature, pressure, and electric fields. Below some critical temperature T C , the dielectric displacement (electric polarization) spontaneously assumes non-zero values in the absence of any externally applied force. The transition between non-ferroelectric and ferroelectric phases is accompanied by a loss of symmetry, characterized by double-well minima below the transition temperature, resulting in a switchable polarization that is accompanied by a hysteresis in the electric field-dielectric displacement response. As a class of materials, ferroelectrics also exhibit unusually large and nonlinear generalized susceptibilities; their dielectric, piezoelectric, elastic, and other properties display critical behavior near the ferroelectric phase transformation temperature. Ferroelectrics may be regarded as high energydensity materials as well that can be configured to store, release or interconvert electrical and mechanical energy in a well-controlled manner. Their exceptionally large piezoelectric compliances, pyroelectric coefficients, and dielectric susceptibilities can be exploited in a variety of microelectronic devices. Important examples of these include piezoelectric sensors and actuators, pyroelectric thermal imaging devices, high-dielectric constant capacitors, electro-optic light valves, and thin-film memories. Because of their strongly non-linear dielectric response ferroelectrics can be utilized in applications such as frequency-agile pha...

show abstract

Fabrication of epitaxial nanostructured ferroelectrics and investigation of their domain structures

Cited by 20 publications

References 66 publications

Mobile Ferroelastic Domain Walls in Nanocrystalline PZT Films: the Direct Piezoelectric Effect

Mobile Ferroelastic Domain Walls in Nanocrystalline PZT Films: the Direct Piezoelectric Effect

Individual switching of film-based nanoscale epitaxial ferroelectric capacitors

Recent developments in ferroelectric nanostructures and multilayers

Contact Info

Product

Resources

About