Fabrication of Flexible Au/ZnO/ITO/PET Memristor Using Dilute Electrodeposition Method

Fauzi, Fatin Bazilah; Ani, Mohd Hanafi; Othman, Raihan; Azhar, Ahmad Zahirani Ahmad; Mohamed, Mohd Ambri; Herman, Sukreen Hana

doi:10.1088/1757-899x/99/1/012002

Cited by 9 publications

(5 citation statements)

References 12 publications

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“…In recent years, transition metal oxides have attracted significant attraction due to their CMOS compatibility and ease of synthesis [ 148 ]. ZnO is the most common metal oxide used in electrochemical synthesis.…”

Section: Electrodeposited Resistive Switching Materials For Memory St...mentioning

confidence: 99%

“…Fuzi et al also fabricated a flexible Au/ZnO/ITO/PET RS device using electrodeposition. They reported that deposition time is an essential parameter when tuning the RS properties [ 148 ]. Figure 7 e presents the semi-logarithmic I–V curves for electrochemically prepared ZnO thin films deposited for 15, 30, 60, and 120 s. Above 60 s, the device did not exhibit any notable I–V characteristics, while the R OFF /R ON ratio decreased with increasing deposition time ( Figure 7 f).…”

Section: Electrodeposited Resistive Switching Materials For Memory St...mentioning

confidence: 99%

Section: Figurementioning

confidence: 99%

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Review of Electrochemically Synthesized Resistive Switching Devices: Memory Storage, Neuromorphic Computing, and Sensing Applications

et al. 2023

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Resistive-switching-based memory devices meet most of the requirements for use in next-generation information and communication technology applications, including standalone memory devices, neuromorphic hardware, and embedded sensing devices with on-chip storage, due to their low cost, excellent memory retention, compatibility with 3D integration, in-memory computing capabilities, and ease of fabrication. Electrochemical synthesis is the most widespread technique for the fabrication of state-of-the-art memory devices. The present review article summarizes the electrochemical approaches that have been proposed for the fabrication of switching, memristor, and memristive devices for memory storage, neuromorphic computing, and sensing applications, highlighting their various advantages and performance metrics. We also present the challenges and future research directions for this field in the concluding section.

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Section: Electrodeposited Resistive Switching Materials For Memory St...mentioning

confidence: 99%

Section: Electrodeposited Resistive Switching Materials For Memory St...mentioning

confidence: 99%

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Review of Electrochemically Synthesized Resistive Switching Devices: Memory Storage, Neuromorphic Computing, and Sensing Applications

et al. 2023

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“…From the emerging concepts, resistive switching (RS) devices, as scalable two terminal components, are highly promising for this type of applications. Some of the most popular choices for flexible and stretchable substrates include polyethylene terephthalate (PET) [5][6][7][8][9][10][11], plastic [12], paper [1,3,13,14], polyimide (PI) [15,16], metal foil [17], polyethersulfone (PES) [18,19], parylene-C [20] and textile [21].…”

Section: Introductionmentioning

confidence: 99%

“…On the other hand, the use of polymeric materials such as polyethylene terephthalate (PET) as flexible and transparent substrates is a rapidly emerging field due to its low-cost and scalability [2,5,6,8,10,11,23]. Furthermore, the deposition of an indium tin oxide (ITO) thin film on top of PET is a common choice for a conductive, transparent and flexible substrate, that can then be used for memory and neuromorphic applications [24,25].…”

Section: Introductionmentioning

confidence: 99%

Resistive switching of silicon-silver thin film devices in flexible substrates

et al. 2020

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Novel applications for memory devices demand nanoscale flexible structures. In particular, resistive switching (RS) devices are promising candidates for wearable and implantable technologies. Here, the Pt/Si/Ag/TiW metal–insulator–metal structure was fabricated and characterized on top of flexible substrates using a straightforward microfabrication process. We also showed that these substrates are compatible with sputtering deposition. RS was successfully achieved using both commercial cellulose cleanroom paper and bacterial cellulose, and polymer (PET) substrates. The bipolar switching behavior was observed for both flat and bent (under a radius of 3.5 mm) configurations. The observed phenomenon was explained by the formation/rupture of metallic Ag filaments in the otherwise insulating Si host layer.

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