FABRICATION OF SmBiO₃/NiO DOUBLE BUFFER LAYER FOR COATED CONDUCTORS

Abstract

NiO layers were prepared in Ar flow at temperatures between 750 • C to 850 • C by using surface oxidation epitaxial method on Ni-5%W alloy substrates. NiO(200) buffer layer with well textured, smooth, dense and crack-free surface was prepared in Ar ambience with a flow rate of 500 ml/min at 800 • C for 10.0 min. Then SmBiO 3 buffer layer was coated on the well epitaxial NiO(200) layer by chemical solution deposition (CSD) method.