Fabrication of GaAs nanowire devices with self-aligning W-gate electrodes using selective-area MOVPE

Selective epitaxial growth of GaAs tips for local spin injector applications

“…Selective area MOVPE (SA-MOVPE) is used for the making of lowdimensional quantum confinement structures or periodic arrays of III-V stripes or pillars for waveguide and photonic applications [12][13][14][15]. These remarkable 3D structures were obtained for limited and well-controlled growth conditions.…”

MOVPE selectively grown GaAs nano-wires with self-aligned W side gate

“…Fabrication process of the device is as follows [13]: Firstly, wire-like mask openings with squeezed parts (Fig. 2(a)) were formed along the [1 1 0] direction on (0 0 1) GaAs semi-insulating substrates using electron-beam lithography and a lift-off of plasma-sputtered SiO 2 /W mask.…”

Selective-Area Growth of InAs Nanowires with Metal/Dielectric Composite Mask and Their Application to Vertical Surrounding-Gate Field-Effect Transistors

“…In this paper, we describe a novel procedure for fabricating NW vertical devices without a complicated postgrowth process. We grew InAs NWs using a composite mask 18,19) of tungsten (W) and a dielectric (SiON or SiO 2 ) for selective-area metalorganic vapor-phase epitaxial (SA-MOVPE) growth. Here, the W layer serves as a bottom electrode of InAs NWs as well as the mask for SA-MOVPE growth, which means that the bottom electrode is formed in a self-aligned manner without additional postgrowth processing.…”

“…20,21) To suppress the lateral overgrowth, the use of a composite mask has been proposed, and the successful growth of GaAs mesa structures on a GaAs (001) surface has been reported. 18) For the growth of NWs, we prepared a SiON/W/SiON mask on a semi-insulating InP (111)B substrate and defined mask holes with a diameter of about 100 nm. Here, the upper SiON layer was used to suppress the lateral growth of InAs over the W mask.…”