Fabrication of GaN dot structure by droplet epitaxy using NH3

Maruyama, Toru; Otsubo, Hiroaki; Kondo, Toshiyuki; Yamamoto, Yo; Naritsuka, Shigeya

doi:10.1016/j.jcrysgro.2006.09.031

Cited by 27 publications

(17 citation statements)

References 11 publications

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“…Changing the growth parameters, especially Ga flux, is likely to change the morphology of these NDs in terms of size and density. Similar phenomenon has been reported earlier for the fabrication of GaN dot structures by droplet epitaxy using NH 3 [10].…”

Section: Resultssupporting

confidence: 88%

Formation of GaN nanodots on Si (111) by droplet nitridation

Debnath¹,

Stoïca²,

Besmehn

et al. 2009

Journal of Crystal Growth

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Section: Resultssupporting

confidence: 88%

Formation of GaN nanodots on Si (111) by droplet nitridation

Debnath¹,

Stoïca²,

Besmehn

et al. 2009

Journal of Crystal Growth

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“…Plasma-assisted molecular beam epitaxy (MBE) is a suitable method for producing InN and GaN, because low growth temperatures are possible in combination with an ultra high vacuum (UHV) growth environment, thus reducing the impurity incorporation (Lu et al 2001;Nanishi et al 2003). To fabricate III-nitride nanostructures by Stranski-Krastanow (SK) growth mode (Adelmann et al 2002), recently droplet epitaxy (DE) technique has been utilized (Maruyama et al 2007). In DE technique, to convert the droplets into semiconductor nanostructures, group III droplets are exposed to a subsequent group V molecular beam in DE-MBE approach.…”

Section: Introductionmentioning

confidence: 99%

Self-assembled flower-like nanostructures of InN and GaN grown by plasma-assisted molecular beam epitaxy

et al. 2010

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Nanosized hexagonal InN flower-like structures were fabricated by droplet epitaxy on GaN/ Si(111) and GaN flower-like nanostructure fabricated directly on Si(111) substrate using radio frequency plasma-assisted molecular beam epitaxy. Powder X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to study the crystallinity and morphology of the nanostructures. Moreover, X-ray photoelectron spectroscopy (XPS) and photoluminescence (PL) were used to investigate the chemical compositions and optical properties of nano-flowers, respectively. Activation energy of free exciton transitions in GaN nano-flowers was derived to be ~ 28⋅5 meV from the temperature dependent PL studies. The formation process of nanoflowers is investigated and a qualitative mechanism is proposed.

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“…Weber et al demonstrated the use of pure gallium as a buffer layer to improve the crystal quality of GaN epilayers grown by a plasma-assisted molecular beam epitaxy on (0001) sapphire [3][4][5]. Maruyama et al carried out the formation of droplet epitaxy using NH 3 gas for the fabrication of GaN dots [6,7]. Chasse et al focused on the nitridation of predeposited Ga layers (droplets) using an ion beam-assisted molecular beam epitaxy.…”

Section: Introductionmentioning

confidence: 99%

Reducing the warpage and dislocation density of GaN template grown by HVPE with gallium droplet treatment

Choi¹,

Oh²,

Kim³

et al. 2010

Phys. Status Solidi (c)

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The warpage of the GaN template grown by a HVPE with gallium droplet treatment (GDT) was 13.8 μm, which was reduced by 80.3% of the warpage for GaN template grown by conventional MOCVD and 43% of the warpage for GaN template grown by HVPE without GDT. The treatment of gallium droplets on sapphire was achieved by thermal evaporator at room temperature. The E2 high peak of GaN template with GDT showed at 566.5 cm‐1, whereas the E2 high peak of GaN template by MOCVD positioned at 569.5 cm‐1 in Raman scattering spectra. According to the frequency shifts of E2 high peak position for each template around 3 cm‐1, the release of compressive stress of GaN template grown by HVPE with GDT was shown. In study of FE‐SEM and Grow discharge spectroscopy (GDS), voids and concentration decline zones of gallium and aluminium in counter direction were formed at the interface between GaN epilayer and sapphire substrate during GaN growth by HVPE. We expected that the decrease of warpage and stress for GaN template with GDT could be caused by the formation of voids and concentration decline zones of gallium and aluminium. Etch pits density of GaN template with GDT was around 8.5x107/cm2. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Fabrication of GaN dot structure by droplet epitaxy using NH3

Cited by 27 publications

References 11 publications

Formation of GaN nanodots on Si (111) by droplet nitridation

Formation of GaN nanodots on Si (111) by droplet nitridation

Self-assembled flower-like nanostructures of InN and GaN grown by plasma-assisted molecular beam epitaxy

Reducing the warpage and dislocation density of GaN template grown by HVPE with gallium droplet treatment

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