Fabrication of GaN light emitting diode membrane on Si substrate for MEMS applications

Abstract

GaN membrane structures are fabricated for micro-electro-mechanical systems (MEMS). The combination of GaN and Si semiconductors is promising for future MEMS. However, due to the different material properties, the fabrication of MEMS using GaN semiconductor is still limited. Here, a simple membrane of GaN semiconductor deposited on Si substrate was investigated. The GaN crystal was grown by molecular beam epitaxy and metal organic chemical vapor deposition. The basic properties of the fabricated GaN light emitting diode (LED) were investigated. Etching the Si substrate from the backside, a freestanding GaN LED membrane was fabricated which can be useful for micro total analysis system. From those experimental results, it was shown that the GaN LED membrane was feasible for MEMS applications.

Design of GaN-Based PCSEL With Temperature-Insensitive Lasing Wavelength

“…The proposed configuration can be fabricated through GaN-on-silicon platform. The fabrication of freestanding structure on GaN-silicon platform is a mature technology which has been widely reported in LED radiation pattern [28], [29] and enhance light extraction [30], [31]. TiO2 micro-nano structure etching is compatible with GaN, it has been used as high contrast grating reflector in GaN-VCSELs [32].…”

Impact of different layers on performance of OLED

“…The light generation in both, conventional LED (Wakui et al 2011) and OLED, is because of recombination of electrons and holes. Still, there are a lot of differences in them ranging from architecture to carrier transport, and processes governing recombination rate.…”

Thickness-Dependent Performance of a Free-Standing Membrane LED

“…Aiming to solve the aforementioned issues, various approaches have been presented, such as micro-and nano-patterned surface texturing, antireflective coating layers, photonic crystals and so on [13]- [18]. Recently, Hane et al reported the removal of silicon substrate from the backside to form a free-standing GaN membrane offering much more manufacturing flexibilities for MEMS applications [19]. There is a potential for increasing the light extraction efficiency and improving the electrical performance of LED on GaN-on-silicon platform by using free-standing GaN membrane.…”