Fabrication of Ge&lt;sub&gt;30&lt;/sub&gt;Te &lt;sub&gt;70-x&lt;/sub&gt;Sb&lt;sub&gt;x&lt;/sub&gt; Glasses Alloys and Studying the Effect of Partial Substitution on D.C Electrical Energy Parameters

Chillab, Riyadh Kamil; Jahil, Sarab Saadi; Wadi, Kassim Mahdi; Jasim, Kareem A.; Shaban, Auday H.

doi:10.4028/www.scientific.net/kem.900.163

Cited by 18 publications

(10 citation statements)

References 22 publications

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“…The graph is a curve, demonstrating that this system is conducted by a thermally triggered process, and the behavior of the conduction curves indicates that all the alloys under experiment are semiconductors. It is also noted that an increase in the concentration of cadmium in most alloys leads to a decrease in electrical Resistivity in general [17]. As for the ratio x = 15, we notice a significant decrease in the resistivity due to the formation of non-integral bonds, which cause an increase in charge carriers, holes, and electrons.…”

Section: Resultsmentioning

confidence: 55%

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The Effect of Partial Substitution of Ge-S-Cd Alloys on the Density of Energy States

Zainab Abd Al-hadi,

Kareem Ali Jasim

2024

IHJPAS

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Five samples of the ternary alloy Ge-S-Cd were created using the melting point method, and the effects of partially substituting cadmium for germanium were determined. and partial substitution of germanium by cadmium was used to study the change in electrical conductivity. Electrical experiments were performed on Ge35-xS65Cdxternary alloy with x = 0, 5, 10, 15, and 20. It was discovered that the conductivity (σdc) rises with rising temperature in all samples under experiment. This confirms that the samples have semiconductor behavior. It has been observed that there are three regions of electrical conductivity in the electrical conductivity curve at low, moderate, and high temperatures. The preexponential elements and effective energies of each of the three conduction regions were calculated for each of the Cadmium values. It was found that all of them were impacted by a rise in the value of cadmium in the ingot. A numerical analysis of the conductivity equation was also performed to calculate the energy of the expanding states' density in local states and at the Fermi level. It has been observed that all of the values of samples change with the rising value of cadmium concentration.

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Section: Resultsmentioning

confidence: 55%

“…Contrarily, phonons generated by lattice vibration result in the electronphonon reaction. This reaction is due to the electron being held back, so the electron requires greater energy to operate them, which explains the first region's elevated activation energy amounts [17,18].…”

Section: 𝝈 = 𝝈mentioning

confidence: 99%

The Effect of Partial Substitution of Ge-S-Cd Alloys on the Density of Energy States

Zainab Abd Al-hadi,

Kareem Ali Jasim

2024

IHJPAS

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“…The thickness of AIS and AgInSe1.8S0.2 samples was determined using the optical interferometer method. Additionally, the optical properties were assessed by noting transmission and absorption spectrums within the 400 to 1000 nm range, calculating absorption coefficients (α) and the energy gap (Egopt) using Lambert's Law and Tauc equation, respectively [28][29][30][31]. Optical constants were also considered [32,33].…”

Section: Methodsmentioning

confidence: 99%

Effect of Sulfur on Characterization of AgInSe_1.8S_0.2 Thin Film and n-AgInSe_1.8S_0.2 / p-Si Solar Cell

Hussein,

Hassun,

Al-Maiyaly

et al. 2024

J. Phys.: Conf. Ser.

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Ternary Silver Indium selenide Sulfur AgInSe1.8S0.2 in pure form and with a 0.2 ratio of Sulfur were fabricated via thermal evaporation under vacuum 3*10-6 torr on glasses substrates with a thickness of (550) nm. These films were investigated to understand their structural, optical, and Hall Characteristics. X-ray diffraction analysis was employed to examine the impact of varying Sulfur ratios on the structural properties. The results revealed that the AgInSe1.8S0.2 thin films in their pure form and with a 0.2 Sulfur ratio, both at room temperature and after annealing at 500 K, exhibited a polycrystalline nature with a tetragonal structure and a predominant orientation along the (112) plane, indicating an enhanced degree of crystallinity. The Atomic Force Microscopy (AFM) was utilized to explore how Sulfur affects roughness of surfaces and sampls Grain Size. Furthermore, optical parameters, such as the optical gap and absorption coefficient, were calculated to assess the influence of Sulfur on the optical properties of the AgInSe1.8S0.2 thin films. The UV/Visible measurements indicated a reduction in the energy band gap to 1.78 eV for AgInSe1.8S0.2 at 500 K, making these films potentially suitable for photovoltaic applications. These thin films exhibited donor characteristics, with an increase in electron concentration observed with higher Sulfur content and annealing temperature.

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“…The study aims at conducting the process of preparing the alloy with the chemical formula Se60Te40-xSnx with different concentrations of Sn (0, 5,10,15,20) by melting point method. The chemical elements Se, Te, and Sn were taken at high purity (99.999%).…”

Section: Methodsmentioning

confidence: 99%

“…Figure9. electrical resistance as a function of temperature of of the Se60Te40-xSnx glass system (x = 0,5,10,15,20) …”

mentioning

confidence: 99%

A Study of the Effectiveness of Tin on the Thermal Conductivity Coefficient and Electrical Resistance of Se60Te40-xSnx Chalcogenide Glass

Khudhair

Jasim

2023

IHJPAS

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This research calculated the effect of partial replacement of Trillium with tin by weight ratios x=0, 5, 10, 15, and 20 of the weight of manufactured samples on the thermal conductivity coefficient of Se60Te40-xSnx chalcogenide glasses. The thermal conductivity coefficient of the samples was calculated using a disk- Lee. The results showed that increasing the concentration of tin improves the thermal insulation ability by decreasing the thermal conductivity value and then determining the optimal weight ratios at which a large thermal insulation is obtained. The electrical resistivity as a function of temperature was studied. The electrical resistivity (rd.c) was calculated as a function of temperature for all samples, using two-point probe techniques in the dark electrical resistivity measurements of Se60Te40-xSnx glasses for all values made in the temperature range 303-455 K. The electrical resistivity was found that it depends on the change in Tin addition, the temperature is clearly affected by the increase in the concentration of tin in the alloy. The electrical resistance increases when the concentration of Tin increase of Se60Te40-xSnx

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Fabrication of Ge<sub>30</sub>Te <sub>70-x</sub>Sb<sub>x</sub> Glasses Alloys and Studying the Effect of Partial Substitution on D.C Electrical Energy Parameters

Cited by 18 publications

References 22 publications

The Effect of Partial Substitution of Ge-S-Cd Alloys on the Density of Energy States

The Effect of Partial Substitution of Ge-S-Cd Alloys on the Density of Energy States

Effect of Sulfur on Characterization of AgInSe_1.8S_0.2 Thin Film and n-AgInSe_1.8S_0.2 / p-Si Solar Cell

A Study of the Effectiveness of Tin on the Thermal Conductivity Coefficient and Electrical Resistance of Se60Te40-xSnx Chalcogenide Glass

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Fabrication of Ge<sub>30</sub>Te <sub>70-x</sub>Sb<sub>x</sub> Glasses Alloys and Studying the Effect of Partial Substitution on D.C Electrical Energy Parameters

Cited by 18 publications

References 22 publications

The Effect of Partial Substitution of Ge-S-Cd Alloys on the Density of Energy States

The Effect of Partial Substitution of Ge-S-Cd Alloys on the Density of Energy States

Effect of Sulfur on Characterization of AgInSe1.8S0.2 Thin Film and n-AgInSe1.8S0.2 / p-Si Solar Cell

A Study of the Effectiveness of Tin on the Thermal Conductivity Coefficient and Electrical Resistance of Se60Te40-xSnx Chalcogenide Glass

Contact Info

Product

Resources

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Effect of Sulfur on Characterization of AgInSe_1.8S_0.2 Thin Film and n-AgInSe_1.8S_0.2 / p-Si Solar Cell