2006
DOI: 10.1063/1.2188057
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Fabrication of genuine single-quantum-dot light-emitting diodes

Abstract: We present a simple approach for the fabrication of genuine single quantum-dot light-emitting diodes. A submicron wide bottom contact stripe is formed by focused ion beam implantation doping into a GaAs buffer layer. Successive overgrowth with a thin intrinsic layer incorporating self-assembled InAs quantum dots, followed by a top contact layer of complementary doping type and standard photolithographic processing, allows for electrical cross sections in the sub-μm2 range. In devices with sufficiently low dot … Show more

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Cited by 37 publications
(26 citation statements)
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“…As mentioned above, the electrical bandwidth appears limited in the present device by trapped charge states which may be reduced by improved material growth and processing [26,27]. The bandwidth is additionally limited by the contact's RC time constant, which, however, could be as low as 10 ps [28]. Meanwhile, the optical bandwidth is limited by the response time of the coupled QD-cavity system.…”
Section: Qd-controlled Cavity Transmissionmentioning
confidence: 91%
See 1 more Smart Citation
“…As mentioned above, the electrical bandwidth appears limited in the present device by trapped charge states which may be reduced by improved material growth and processing [26,27]. The bandwidth is additionally limited by the contact's RC time constant, which, however, could be as low as 10 ps [28]. Meanwhile, the optical bandwidth is limited by the response time of the coupled QD-cavity system.…”
Section: Qd-controlled Cavity Transmissionmentioning
confidence: 91%
“…This power could be reduced very substantially if the p-i-n region were defined at submicron length scale around the quantum dot, which should lower the capacitance below 1 fF [28]. The quantum dot could be shifted through the cavity with a voltage below 100 mV [20].…”
Section: Qd-controlled Cavity Transmissionmentioning
confidence: 99%
“…Emissions from 0D-exciton complexes localized in semiconductor quantum dots (QDs) are one of the most promising candidates for single-photon and/or entangled-photon pair sources [2,3,4,5,6,7,8,9,10,11,12]. Recently, research on semiconductor QD embedded in epitaxially grown nanowire (NW) structures has been a subject of interest in practical nano-scale device applications, such as photon sources, single-electron storage, and quantum logic circuit.…”
Section: Related Contentmentioning
confidence: 99%
“…For high-speed electrical modulation, the RC time constants of the lasers have to be small enough, where C and R are the capacitance and resistance of the laser. We believe that very fast electrical pumping of nanocavity lasers is possible, as a recent experiment achieved time constants below 10 ps using micron-scale contacts with sub-fF capacitance 27 . In addition, photonic crystal nanocavity lasers do not require highly resistive Bragg mirror layers, which also limit electrical modulation speeds in fast vertical cavity surface-emitting lasers.…”
mentioning
confidence: 99%