Fabrication of grating coupled GaAs/AlGaAs quantum well infrared photodetector on an Si substrate

Abstract

The grating coupled GaAs/AlGaAs quantum well infrared photodetectors (QWIPs) are integrated onto Si substrates using metal wafer bonding and epitaxial lift-off process. The 1 μm depth of hexagonal hole structure of grating was formed. The energy-dispersive x-ray spectroscopy results confirmed that the grating coupled QWIP is successfully mounted on an Si substrate. By evaluating the Raman spectra, PL, and surface roughness of bonded QWIP samples, the authors found that the grating does not induce any change in the optical or structural characteristics of actual QWIP layers. The dark current–voltage characteristics show a nearly identical dark current level between grating coupled QWIP and nongrating QWIP. The photocurrent spectrum shows that the peak photocurrent intensity of grating coupled QWIP is about 16 times higher than that of nongrating QWIP. This indicates that the grating effectively contributes to an increase in the light absorption of QWIP, showing large room for improvement of QWIP performance by further optimization of a grating structure.

High-Performance Flexible InAs Thin-Film Photodetector Arrays with Heteroepitaxial Growth Using an Abruptly Graded InxAl1–xAs Buffer

“…In addition, several resonant peaks were observed in the spectral responsivity of the flexible PD, which were positioned at around 2.85 and 3.4 μm. We think that it is due to the micro-cavity effect in the two mirrors of Pt/Au bonding material and InAs/air interface. ,, Figure c shows the noise current level of the flexible device. The specific detectivity of flexible InAs PD is defined as where A is the window size of the device, Δ f is the bandwidth, and i n is the noise current of the device.…”

“…We think that it is due to the microcavity effect in the two mirrors of Pt/Au bonding material and InAs/air interface. 14,35,36 Figure 6c shows the noise current level of the flexible device. The specific detectivity of flexible InAs PD is defined as…”

Ultra-broadband near-perfect metamaterial absorber for photovoltaic applications

“…Kim et al adopted the lithography process to design a GaAs-AlGaAs multilayer grating structure. 52 Fig. 9 shows a simplied diagram of the suggested fabrication steps that could be taken to build the proposed metamaterial structure.…”

Spectral properties of a broadband far infrared photodetector with a new design of active region

“…The need to improve their operating parameters (detectivity, sensitivity) at different temperature regimes remains relevant and is constantly in the center of a research attention. Both nitride (polar, semi-polar, and nonpolar) [30][31][32] and arsenide [33][34][35][36] photodetectors are permanently modified and improved. In these and in many other papers, different materials of active elements and substrates are used instead of quantum well (QW) layers: superlattices of quantum dots or disks, nanowires, etc.…”