Fabrication of high anti-reflection nanowires on silicon using two-stage metal-assisted etching

Liu, Hsi-Chien; Wang, Gou‐Jen

doi:10.1063/1.4822053

Cited by 4 publications

(4 citation statements)

References 19 publications

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“…Numerous techniques have been experimented to obtain silicon nanostructures either in a bottom-up scheme or top-down scheme. Among recent developments, the metal-assisted chemical etching (MCAE) presents as an efficient and low-cost technique for various Si nanostructures such as Si Nanowires (SINWs) [108], porous SiNWs, and Si nanopores [109]. This approach has been effectively used for fabricating large-area silicon nanowires arrays and reported to have increased absorption of incident light and light scattering [110].…”

Section: Silicon-based Nanomaterialsmentioning

confidence: 99%

Anti-Reflective Coating Materials: A Holistic Review from PV Perspective

Natarajan

Pugazhendhi

Elavarasan³

et al. 2020

Energies

151

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The solar photovoltaic (PV) cell is a prominent energy harvesting device that reduces the strain in the conventional energy generation approach and endorses the prospectiveness of renewable energy. Thus, the exploration in this ever-green field is worth the effort. From the power conversion efficiency standpoint of view, PVs are consistently improving, and when analyzing the potential areas that can be advanced, more and more exciting challenges are encountered. One such crucial challenge is to increase the photon availability for PV conversion. This challenge is solved using two ways. First, by suppressing the reflection at the interface of the solar cell, and the other way is to enhance the optical pathlength inside the cell for adequate absorption of the photons. Our review addresses this challenge by emphasizing the various strategies that aid in trapping the light in the solar cells. These strategies include the usage of antireflection coatings (ARCs) and light-trapping structures. The primary focus of this study is to review the ARCs from a PV application perspective based on various materials, and it highlights the development of ARCs from more than the past three decades covering the structure, fabrication techniques, optical performance, features, and research potential of ARCs reported. More importantly, various ARCs researched with different classes of PV cells, and their impact on its efficiency is given a special attention. To enhance the optical pathlength, and thus the absorption in solar PV devices, an insight about the advanced light-trapping techniques that deals with the concept of plasmonics, spectral modification, and other prevailing innovative light-trapping structures approaching the Yablonovitch limit is discussed. An extensive collection of information is presented as tables under each core review section. Further, we take a step forward to brief the effects of ageing on ARCs and their influence on the device performance. Finally, we summarize the review of ARCs on the basis of structures, materials, optical performance, multifunctionality, stability, and cost-effectiveness along with a master table comparing the selected high-performance ARCs with perfect AR coatings. Also, from the discussed significant challenges faced by ARCs and future outlook; this work directs the researchers to identify the area of expertise where further research analysis is needed in near future.

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Section: Silicon-based Nanomaterialsmentioning

confidence: 99%

Anti-Reflective Coating Materials: A Holistic Review from PV Perspective

Natarajan

Pugazhendhi

Elavarasan³

et al. 2020

Energies

151

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“…A Si nanowire array can thus be produced through successive reduction and oxidation (redox) reactions. We used a two-stage MAE to enable the fabrication of a uniform SNA [22,23]. First, we conducted a short-time MAE using a high-concentration AgNO 3 to produce a silver layer on the surface of the KOH-etched micropyramid array.…”

Section: Qd/simentioning

confidence: 99%

Sb₂S₃Quantum-Dot Sensitized Solar Cells with Silicon Nanowire Photoelectrode

Hsieh

Lee

Wang

2015

International Journal of Photoenergy

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We propose a novel quantum-dot sensitized solar cell (QDSSC) structure that employs a quantum dot/semiconductor silicon (QD/Si) coaxial nanorod array to replace the conventional dye/TiO2/TCO photoelectrode. We replaced the backlight input mode with top-side illumination and used a quantum dot to replace dye as the light-absorbing material. Photon-excited photoelectrons can be effectively transported to each silicon nanorod and conveyed to the counter electrode. We use two-stage metal-assisted etching (MAE) to fabricate the micro-nano hybrid structure on a silicon substrate. We then use the chemical bath deposition (CBD) method to synthesize a Sb2S3quantum dot on the surface of each silicon nanorod to form the photoelectrode for the quantum dot/semiconductor silicon coaxial nanorod array. We use a xenon lamp to simulate AM 1.5 G (1000 W/m2) sunlight. Then, we investigate the influence of different silicon nanorod arrays and CBD deposition times on the photoelectric conversion efficiency. When an NH (N-type with high resistance) silicon substrate is used, the QD/Si coaxial nanorod array synthesized by three runs of Sb2S3deposition shows the highest photoelectric conversion efficiency of 0.253%. The corresponding short-circuit current density, open-circuit voltage, and fill factor are 5.19 mA/cm2, 0.24 V, and 20.33%, respectively.

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“…It has been reported [27] that the antireflectivity of a nanosilicon substrate is closely proportional to nanowire length. Therefore, the second-stage processing time was set at 5 min to further investigate the antireflectivity of the micronanohybrid structure.…”

Section: Cell Fabrication and Photoelectric Conversion Efficiencymentioning

confidence: 99%

Superior Antireflection Coating for a Silicon Cell with a Micronanohybrid Structure

Liu

Wang

2014

International Journal of Photoenergy

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The object of this paper is to develop a high antireflection silicon solar cell. A novel two-stage metal-assisted etching (MAE) method is proposed for the fabrication of an antireflective layer of a micronanohybrid structure array. The processing time for the etching on an N-type high-resistance (NH) silicon wafer can be controlled to around 5 min. The resulting micronanohybrid structure array can achieve an average reflectivity of 1.21% for a light spectrum of 200–1000 nm. A P-N junction on the fabricated micronanohybrid structure array is formed using a low-cost liquid diffusion source. A high antireflection silicon solar cell with an average efficiency of 13.1% can be achieved. Compared with a conventional pyramid structure solar cell, the shorted circuit current of the proposed solar cell is increased by 73%. The major advantage of the two-stage MAE process is that a high antireflective silicon substrate can be fabricated cost-effectively in a relatively short time. The proposed method is feasible for the mass production of low-cost solar cells.

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Fabrication of high anti-reflection nanowires on silicon using two-stage metal-assisted etching

Cited by 4 publications

References 19 publications

Anti-Reflective Coating Materials: A Holistic Review from PV Perspective

Anti-Reflective Coating Materials: A Holistic Review from PV Perspective

Sb₂S₃Quantum-Dot Sensitized Solar Cells with Silicon Nanowire Photoelectrode

Superior Antireflection Coating for a Silicon Cell with a Micronanohybrid Structure

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Fabrication of high anti-reflection nanowires on silicon using two-stage metal-assisted etching

Cited by 4 publications

References 19 publications

Anti-Reflective Coating Materials: A Holistic Review from PV Perspective

Anti-Reflective Coating Materials: A Holistic Review from PV Perspective

Sb2S3Quantum-Dot Sensitized Solar Cells with Silicon Nanowire Photoelectrode

Superior Antireflection Coating for a Silicon Cell with a Micronanohybrid Structure

Contact Info

Product

Resources

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Sb₂S₃Quantum-Dot Sensitized Solar Cells with Silicon Nanowire Photoelectrode