In this study, an enzymatic glucose biosensor based on a three-dimensional gold nanodendrite (GND) modified screen-printed electrode was developed. The GNDs were electrochemically synthesized on the working electrode component of a commercially available screen-printed electrode using a solution acquired by dissolving bulk gold in aqua regia as the precursor. The 3D GND electrode greatly enhanced the effective sensing area of the biosensor, which improved the sensitivity of glucose detection. Actual glucose detections demonstrated that the fabricated devices could perform at a sensitivity of 46.76 μA mM⁻¹ cm⁻² with a linear detection range from 28 μM-8.4 mM and detection limit of 7 μM. A fast response time (∼3 s) was also observed. Moreover, only a 20 μl glucose oxidase is required for detection owing to the incorporation of the commercially available screen-printed electrode.
In this paper, a novel two-stage metal-assisted etching (MAE) method is proposed for the fabrication of a high anti-reflection silicon nanowire array. In the first stage of etching, a high-concentration etchant is implemented in a short etching time to enable the uniform and complete deposition of coniferous-like silver on the wafer surface. Following the first stage, a low-concentration etchant for producing a vertical and uniform silicon nanowire array is processed in a relatively long etching time. Experimental results demonstrate that the proposed two-stage MAE method can produce high anti-reflection silicon nanowire array on a 6" silicon wafer requiring only a relatively simple and low-cost process. The P-type high-resistance silicon wafer that is etched under the two-stage MAE with the first-stage and second-stage processing time of 30 s and 15 min, respectively, can achieve an average reflectivity of 1.89% for the light spectrum from 200 nm to 1000 nm. In the UV and visible-light regions, the average reflectivity is 1.49% and 1.89%, respectively. The low reflectivity in the UV region enables the absorption of high-energy photons, while the low reflectivity at the IR region allows the absorption of a significant number of photons from sunlight.
The object of this paper is to develop a high antireflection silicon solar cell. A novel two-stage metal-assisted etching (MAE) method is proposed for the fabrication of an antireflective layer of a micronanohybrid structure array. The processing time for the etching on an N-type high-resistance (NH) silicon wafer can be controlled to around 5 min. The resulting micronanohybrid structure array can achieve an average reflectivity of 1.21% for a light spectrum of 200–1000 nm. A P-N junction on the fabricated micronanohybrid structure array is formed using a low-cost liquid diffusion source. A high antireflection silicon solar cell with an average efficiency of 13.1% can be achieved. Compared with a conventional pyramid structure solar cell, the shorted circuit current of the proposed solar cell is increased by 73%. The major advantage of the two-stage MAE process is that a high antireflective silicon substrate can be fabricated cost-effectively in a relatively short time. The proposed method is feasible for the mass production of low-cost solar cells.
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