2015
DOI: 10.1117/1.jmm.14.4.044506
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Fabrication of high-aspect ratio silicon nanopillars for tribological experiments

Abstract: Abstract. This article reports the results of the fabrication of large arrays of nanopillars for future tribological experiments. This fabrication focused on achieving a constant high aspect ratio up to 1∶24 and a separation between each pair of adjacent pillars. Electron beam lithography was used to write patterns in hydrogen silsesquioxane (HSQ) negative tone resist. To achieve nanopillars of high aspect ratios and with smooth sides, deep reactive ion etching was employed with SF 6 and O 2 at cryogenic tempe… Show more

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Cited by 12 publications
(11 citation statements)
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“…For this, the micron-scale structures were fabricated on a Si substrate by a multi-step process, which was a combination of electron beam lithography and reactive ion etching techniques. Similar approaches to silicon patterning are described in a number of earlier works 44-47 . First, a pattern of e-beam resist was created on a Si surface using e-beam lithography.…”
Section: Methodsmentioning
confidence: 90%
See 1 more Smart Citation
“…For this, the micron-scale structures were fabricated on a Si substrate by a multi-step process, which was a combination of electron beam lithography and reactive ion etching techniques. Similar approaches to silicon patterning are described in a number of earlier works 44-47 . First, a pattern of e-beam resist was created on a Si surface using e-beam lithography.…”
Section: Methodsmentioning
confidence: 90%
“…The first approach was used for round and square/rectangular micron pillars, and was adapted from 14,15 . Briefly, using a multi-step process similar to that described in 44 , micron-scale pillars were fabricated on a silicon (Si) substrate by reactive ion etching. A pattern of hard-baked photoresist was created on a Si surface using UV lithography, to work as a mask for etching.…”
Section: Methodsmentioning
confidence: 99%
“…For this, the micron-scale structures were fabricated on a Si substrate by a multi-step process, which was a combination of electron beam lithography and reactive ion etching techniques. Similar approaches to silicon patterning have been successfully used in a number of earlier works 48 51 . First, a pattern of e-beam resist was created on a Si surface using e-beam lithography.…”
Section: Methodsmentioning
confidence: 98%
“… 14 , 15 . Using a multi-step process similar to that described previously 48 , micron-scale pillars were fabricated on a silicon (Si) substrate by reactive ion etching. A pattern of hard-baked photoresist was created on a Si surface using UV lithography, to work as a mask for etching.…”
Section: Methodsmentioning
confidence: 99%
“…However, to enable SERS techniques for practical applications, SERS substrates need to be reproducible and highly sensitive . Advanced lithographic techniques, such as ion beam or electron beam lithography and nanosphere lithography, in combination with reactive ion etching (RIE), are effective techniques that can produce well‐controlled nanostructural arrays on Si substrate . Deposition of metal NPs on the surface of these Si nanostructure arrays can provide high concentration of hot spots, which is essential for application of these substrates as SERS sensors.…”
Section: Introductionmentioning
confidence: 99%