We show that a nanofluidic device consisting of a solution-filled cavity bounded by two closely spaced parallel electrodes can amplify the electrical current from redox molecules inside the cavity by a factor of approximately 400 through redox cycling. The noise spectral density of this signal agrees quantitatively with the calculated fluctuations in the number of molecules inside the cavity due to their diffusive motion. We demonstrate sensitivity to fluctuations of as few as approximately 70 molecules.

Abstract-We have grown superconducting TiN films by atomic layer deposition with thicknesses ranging from 6 to 89 nm. This deposition method allows us to tune the resistivity and critical temperature by controlling the film thickness. The microwave properties are measured, using a coplanar-waveguide resonator, and we find internal quality factors above a million, high sheet inductances (5.2-620 pH), and pulse response times up to 100 µs. The high normal state resistivity of the films (> 100 µΩcm) affects the superconducting state and thereby the electrodynamic response. The microwave response is modeled using a quasiparticle density of states modified with an effective pair-breaker, consistently describing the measured temperature dependence of the quality factor and the resonant frequency.

We present a systematic investigation of the dynamic properties of silicon nitride cantilevers in air. The thermal noise spectra of cantilevers have been measured using a home-made optical deflection setup. Torsional and flexural resonances up to the seventh mode are observed. The dependence of resonance frequencies on the dimensions and mode number is studied in detail. It is found that undercut increases the effective length of the cantilever by a value L, which depends on the undercut distance and the resonance mode shape, but not on the cantilever length. Finite element modelling confirms these experimental findings. A simple model is suggested for the shape of the undercut region, which agrees well with experimental findings. Using this model, the undercut cantilever can be approximated by a stepped beam, where the clamp distance depends on the underetch duration and the mode shape.

A new and simple method is described to plate silicon structures with metallic silver for ultralarge-scale integration in dimensions down to 100 nm at an aspect ratio of 4.25. The silver deposition is initiated by an exchange reaction of silicon with silver ions, and the subsequent layer growth of the activated wafers occurs by electroless plating from supersaturated aqueous silver salt solutions at pH ϳ11. No extra reducing agents are needed since silver ions are reduced at the catalytic silver surface by hydroxyl ions. The "spontaneous" ion-metal transition only proceeds at pH ϳ11 and is likely mediated by the formation of subnanometer-sized [Ag 4 (OH) 2 ] 2ϩ clusters. The silver plating proceeds more easily in smaller structures and yields void-free, crystallized deposits.

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