Microwave Properties of Superconducting Atomic-Layer Deposited TiN Films

Coumou, P. C. J. J.; Zuiddam, M.; Driessen, E. F. C.; Visser, Pieter de; Baselmans, J. J. A.; Klapwijk, T. M.

doi:10.1109/tasc.2012.2236603

Cited by 35 publications

(47 citation statements)

References 20 publications

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“…Moreover, a systematic study of the electrodynamic response of the microwave resonators showed that the behavior of TiN films deviates from conventional Mattis-Bardeen theory and from the behavior of conventional superconductors such as aluminum [14]. The temperature dependence of the relaxation time, presumably the quasiparticle lifetime, probed in superconducting microwave resonators of TiN films is found to be much weaker than the exponential predicted dependence in Kaplan theory [15]. In addition for TiN MKIDs it was observed that the dissipative response has a shorter decay time I than the non-dissipative response at ultralow temperatures [8].…”

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confidence: 83%

“…The average growth rate of the TiN film is 0.45 Å per cycle. The details of this technique are described in [15].…”

Section: Phonon Timementioning

confidence: 99%

“…The recent extensive study of material properties of the similarly sputterdeposited TiN films shows that the films have a nonuniform oxygen incorporation which strongly influences film properties and limits the use of sputtered films in large circuits [11]. In contrast, ALD grown TiN films have the potential advantage of uniformity over a large area [15], [21], [22]. In the present paper we extend these results on the electronphonon energy relaxation time of TiN films grown by the Atomic Layer Deposition (ALD) with different thicknesses and levels of disorder.…”

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confidence: 99%

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Electron–Phonon Energy Relaxation Time in Thin Strongly Disordered Titanium Nitride Films

Кардакова

Coumou

Finkel

et al. 2015

IEEE Trans. Appl. Supercond.

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We have measured the energy relaxation times from the electron-bath to phonon-bath in strongly disordered TiN films, grown by atomic layer deposition. The measured values of vary from 12 ns to 91 ns. Over a temperature range from 3.4 to 1.7 K they follow T -3 temperature dependence, consistent with values of reported before for sputtered TiN films. For the most disordered film, with an effective elastic mean free path of 0.35 nm, we find a faster relaxation and a stronger temperature dependence, which may be an additional indication of the influence of strong disorder on a superconductor.  Index Terms-TiN, thin films, electron-phonon interaction, ALD.

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confidence: 83%

“…The average growth rate of the TiN film is 0.45 Å per cycle. The details of this technique are described in [15].…”

Section: Phonon Timementioning

confidence: 99%

mentioning

confidence: 99%

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Electron–Phonon Energy Relaxation Time in Thin Strongly Disordered Titanium Nitride Films

Кардакова

Coumou

Finkel

et al. 2015

IEEE Trans. Appl. Supercond.

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“…Several ALD TiN films have been deposited on high resistivity (> 10 kΩcm) Si (100) substrates covered with a thin surface layer of native silicon oxide (for details see Coumou et al [17]). The microwave properties of these TiN films have been analysed in detail by Driessen et al [18] and by Coumou et al [19].…”

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confidence: 99%

Anomalous response of superconducting titanium nitride resonators to terahertz radiation

Bueno

Coumou

Zheng

et al. 2014

Applied Physics Letters

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We present an experimental study of KIDs fabricated of atomic layer deposited TiN films, and characterized at radiation frequencies of 350 GHz. The responsivity to radiation is measured and found to increase with increasing radiation powers, opposite to what is expected from theory and observed for hybrid niobium titanium nitride / aluminium (NbTiN/Al) and all-aluminium (allAl) KIDs. The noise is found to be independent of the level of the radiation power. The noise equivalent power (NEP) improves with higher radiation powers, also opposite to what is observed and well understood for hybrid NbTiN/Al and all-Al KIDs. We suggest that an inhomogeneous state of these disordered superconductors should be used to explain these observations. Superconducting resonators have been proposed as kinetic inductance detectors (KIDs) for sensitive multipixel radiation detection [1]. Antenna-coupled hybrid niobium titanium nitride / aluminium (NbTiN/Al) KIDs [2,3] and all-aluminium (all-Al) [4] have shown generationrecombination noise and photon noise limited performance. KIDs can also be constructed as lumped element kinetic inductance detectors (LEKIDs) [5] in which the KID is arranged as a photon absorbing area matched to free space. Aluminium LEKIDs have also shown generation-recombination and photon noise limited performance [6]. However, the low normal-state resistivity of Al makes the design of the absorber for very high frequency radiation complex. Therefore, superconductors with a high normal state resistivity have recently become of particular interest [9].A figure of merit F to optimize the responsivity of KIDs is defined as, with α sc the kinetic inductance fraction, τ the quasiparticle recombination time, Q i the internal quality factor, F res the resonance frequency, N (0) is the single spin electron density of states at the Fermi level, and V the volume of the KID. For example, Al KIDs have a long quasiparticle recombination time (a few milliseconds) and high internal quality factors (above one million), but their kinetic inductance fraction is low and their volume large.Superconducting materials with a high resistivity in the normal-state are promising because of their high quality factor and a long enough relaxation time. The high normal resistance implies a large sheet inductance, resulting in a large kinetic inductance fraction, which lowers the KID volume. The high surface impedance also eases matching to free space and optimises the photon absorption. Given the high quality NbTiN resonators pioneered by Barends et al. [7,8], titanium nitride (TiN) has been proposed, because it has the previously mentioned properties in addition to a tuneable critical temperature, which facilitates a relatively long quasiparticle lifetime [9]. Currently, several groups are studying the implementation of TiN KID devices and instruments [10][11][12][13][14]. However, a material like TiN has also drawn the attention of the condensed matter physics community, interested in the disorder-induced superconductorto-insulator transitio...

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“…Reported results were obtained both with sputtered TiN films and with films made by an ALD process [8, 12]. Study of electrodynamic response shows that the behaviour of TiN films deviates from Mattis–Bardeen theory [10] and temperature dependence of microwave-probed relaxation time has weaker temperature dependence than predicted in Kaplan theory [9]. At the same time, relaxation times measured in both sputtered and ALD TiN films are close to show similar values and temperature dependencies [13, 14].…”

Section: Introductionmentioning

confidence: 99%

Design and Characterisation of Titanium Nitride Subarrays of Kinetic Inductance Detectors for Passive Terahertz Imaging

et al. 2018

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We report on the investigation of titanium nitride (TiN) thin films deposited via atomic layer deposition (ALD) for microwave kinetic inductance detectors (MKID). Using our in-house ALD process, we have grown a sequence of TiN thin films (thickness 15, 30, 60 nm). The films have been characterised in terms of superconducting transition temperature , sheet resistance and microstructure. We have fabricated test resonator structures and characterised them at a temperature of 300 mK. At 350 GHz, we report an optical noise equivalent power , which is promising for passive terahertz imaging applications.

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Microwave Properties of Superconducting Atomic-Layer Deposited TiN Films

Cited by 35 publications

References 20 publications

Electron–Phonon Energy Relaxation Time in Thin Strongly Disordered Titanium Nitride Films

Electron–Phonon Energy Relaxation Time in Thin Strongly Disordered Titanium Nitride Films

Anomalous response of superconducting titanium nitride resonators to terahertz radiation

Design and Characterisation of Titanium Nitride Subarrays of Kinetic Inductance Detectors for Passive Terahertz Imaging

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